• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
成果搜索

author:

Zhang, H. (Zhang, H..) [1] (Scholars:张海忠) | Li, J. (Li, J..) [2] | Ju, X. (Ju, X..) [3] | Jiang, J. (Jiang, J..) [4] | Wu, J. (Wu, J..) [5] | Chi, D. (Chi, D..) [6] | Ang, D.S. (Ang, D.S..) [7] | Hu, W. (Hu, W..) [8] (Scholars:胡炜) | Wei, R. (Wei, R..) [9] (Scholars:魏榕山) | Zhu, M. (Zhu, M..) [10] (Scholars:朱敏敏) | Lu, X. (Lu, X..) [11] (Scholars:卢孝强)

Indexed by:

Scopus

Abstract:

Significant advancements in artificial neural networks (ANNs) have driven the rapid progress of artificial intelligence and machine learning. While current feedforward neural networks primarily handle static data, recurrent neural networks (RNNs) are designed for dynamical systems. However, RNNs demand extensive training on specific tasks, limiting their scalability and affordability for edge computing. Physical reservoir computing (RC) offers an alternative approach by mapping inputs into high-dimensional states, allowing for pattern analysis within a fixed reservoir. Unlike RNNs, RC is well-suited for temporal and sequential data processing with rapid speed and low training costs. This makes RC suitable for hardware implementation across various research domains. Nonetheless, existing demonstrations of RC remain constrained to small-scale device arrays. As electronic synapse arrays aim to approach very large-scale and highly complex hardware as in the human brain, managing heat dissipation becomes a formidable challenge. In this work, we successfully developed the neuristors based on textured h-BN films, prepared using a CMOS-compatible technique, and constructed a physical RC system based on as-fabricated devices. Our approach leverages vertically aligned BN to provide aligned diffusion paths for the reproducible migration process of metal ions from the electrodes and offers a potential solution for thermal management in electronic devices. This achievement highlights the promising potential of our neuristors for future high-density and energy-efficient neuromorphic computing. © 2024 Elsevier B.V.

Keyword:

Boron nitride Highly textured High thermal conductivity Neuromorphic device Reservoir computing

Community:

  • [ 1 ] [Zhang H.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 2 ] [Li J.]School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
  • [ 3 ] [Ju X.]Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
  • [ 4 ] [Jiang J.]Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, 932 South Lushan Road, Hunan, Changsha, 410083, China
  • [ 5 ] [Wu J.]Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
  • [ 6 ] [Chi D.]Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
  • [ 7 ] [Ang D.S.]School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
  • [ 8 ] [Hu W.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 9 ] [Wei R.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 10 ] [Zhu M.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 11 ] [Lu X.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China

Reprint 's Address:

Email:

Show more details

Related Keywords:

Source :

Chemical Engineering Journal

ISSN: 1385-8947

Year: 2024

Volume: 498

1 3 . 4 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

Online/Total:340/10018053
Address:FZU Library(No.2 Xuyuan Road, Fuzhou, Fujian, PRC Post Code:350116) Contact Us:0591-22865326
Copyright:FZU Library Technical Support:Beijing Aegean Software Co., Ltd. 闽ICP备05005463号-1