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学者姓名：张海忠
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Abstract ：
如何同质外延生长出具有原子级平整的氧化镓(Ga2O3)单晶薄膜,是制备高性能Ga2O3基功率电子器件或紫外光电器件的基础.本文通过金属有机气相外延(MOVPE)技术综合调控外延生长的热力学条件与动力学参数,在Ga2O3衬底上制备了厚度为1.0 µm的器件级Ga2O3单晶薄膜(非故意掺杂),对薄膜样品进行了物相、表面形貌、晶体质量和电学性能的研究.该薄膜具有单一β相,呈现出与衬底相同的(100)面择优取向.对Ga2O3薄膜表面形貌进行AFM表征,呈现出典型的台阶流形貌,表面粗糙度0.166 nm,且台阶高度0.6 nm(a/2),表明薄膜具有原子级平整.进一步通过HRXRD双晶摇摆曲线评估Ga2O3薄膜结晶质量,外延膜的FWHM低于单晶衬底,表明外延在晶格匹配衬底上的Ga2O3薄膜质量优于衬底.霍尔效应测试结果表明,Ga2O3薄膜的电子迁移率为92.1 cm2/(V·s),载流子浓度为2.65×1016cm-3.本文的研究结果表明只要通过精细化调控温度、压力、Ⅵ/Ⅲ比等关键热力学条件,使核心动力学参数中的横向扩散速率充分大于纵向沉积速率,就有可能在通用的非刻意斜切衬底上实现高长速二维"台阶流"生长.本研究所制备的具有优异晶体质量与电学特性的(100)面同质外延单晶薄膜,在制造高性能Ga2O3功率电子器件具有重要的应用潜力.
Keyword ：
MOVPE MOVPE 二维"台阶流"生长 二维"台阶流"生长 单晶薄膜 单晶薄膜 原子级平整 原子级平整 同质外延 同质外延 氧化镓 氧化镓
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| GB/T 7714 | 李悌涛 , 卢耀平 , 陈端阳 et al. 氧化镓同质外延及二维"台阶流"生长研究 [J]. | 人工晶体学报 , 2025 , 54 (2) : 219-226 . |
| MLA | 李悌涛 et al. "氧化镓同质外延及二维"台阶流"生长研究" . | 人工晶体学报 54 . 2 (2025) : 219-226 . |
| APA | 李悌涛 , 卢耀平 , 陈端阳 , 齐红基 , 张海忠 . 氧化镓同质外延及二维"台阶流"生长研究 . | 人工晶体学报 , 2025 , 54 (2) , 219-226 . |
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In this work, a vertical gallium oxide (Ga2O3) Schottky barrier diode (SBD) with suspended field plate-assisted shallow mesa termination (SFPM-SBD) is proposed and fabricated. The suspended field plate is achieved by using Cl-2 in the ICP etching process to facilitate isotropic etching of Ga2O3. Compared with shallow mesa SBD, the introduction of SFPM can further optimize the electric field (E_Field) distribution. Consequently, a high breakdown voltage (BV) of over 3.5 kV and a low specific ON-resistance of 5.77 m Omega & sdot;cm(2) are achieved, resulting in a power figure of merit (PFOM) >2.12 GW/cm(2). Furthermore, the large-area device with 3 x 3 mm(2) is fabricated, achieving a BV exceeding 1.5 kV and a high forward current of 12 A at 2 V. The simplified fabrication process of the SFPM-SBD, combined with its outstanding performance, makes it a promising candidate for multikilovolt and ampere-class applications.
Keyword ：
Anodes Anodes Electric breakdown Electric breakdown Electric field (E_Field) management Electric field (E_Field) management Etching Etching Fabrication Fabrication gallium oxide (Ga2O3) gallium oxide (Ga2O3) Laser theory Laser theory Leakage currents Leakage currents Optics Optics Power lasers Power lasers Schottky barrier diode (SBD) Schottky barrier diode (SBD) Schottky barriers Schottky barriers Schottky diodes Schottky diodes termination termination
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| GB/T 7714 | Han, Xueli , Xu, Xiaorui , Wang, Zhengbo et al. Ga2O3 Vertical SBD With Suspended Field Plate-Assisted Shallow Mesa Termination for Multikilovolt and Ampere-Class Applications [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2025 , 72 (8) : 4307-4312 . |
| MLA | Han, Xueli et al. "Ga2O3 Vertical SBD With Suspended Field Plate-Assisted Shallow Mesa Termination for Multikilovolt and Ampere-Class Applications" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 72 . 8 (2025) : 4307-4312 . |
| APA | Han, Xueli , Xu, Xiaorui , Wang, Zhengbo , Yang, Hanchao , Chen, Desen , Deng, Yicong et al. Ga2O3 Vertical SBD With Suspended Field Plate-Assisted Shallow Mesa Termination for Multikilovolt and Ampere-Class Applications . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2025 , 72 (8) , 4307-4312 . |
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Aluminum alloys are renowned for their lightweight nature, resistance to oxidation, and impressive mechanical properties. Despite these advantages, their mechanical performance deteriorates significantly in extreme environments. Herein, we present an innovative solution by developing aluminum matrix composites (AMCs) that incorporate 3D printed alumina ceramic lattices. Our investigation demonstrates a remarkable 112.4 % increase in the strength of AMCs compared to pure aluminum, with a concurrent 54.8 % improvement in modulus under identical conditions. Additionally, as the volume fraction of the ceramic lattice varies from 0.21 to 0.45, the modulus of AMCs exhibits a noteworthy increase, ranging from 96.2 to 106.5 GPa, surpassing that of pure aluminum (68.8 GPa). Notably, even at temperatures of up to 300 degrees C, the strength of the Al2O3-Al composite matrix remains stable at 477.3 MPa. X-ray computed tomography analysis elucidates that the structural integrity of these composites predominantly relies on the load-bearing capacity of the ceramic lattices, complemented by the damping effect provided by the aluminum matrix. This innovative approach not only paves the way for scalable production of high-strength metal alloys in the industrial sector but also holds promise for substantial economic opportunities in the near future.
Keyword ：
Alumina lattice Alumina lattice Aluminum matrix composites Aluminum matrix composites Stereolithography 3D printing Stereolithography 3D printing Strength Strength X-ray computed tomography X-ray computed tomography
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| GB/T 7714 | Zhu, Minmin , Deng, Caozhuang , Zhang, Zhanfeng et al. Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites [J]. | JOURNAL OF MANUFACTURING PROCESSES , 2025 , 139 : 126-132 . |
| MLA | Zhu, Minmin et al. "Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites" . | JOURNAL OF MANUFACTURING PROCESSES 139 (2025) : 126-132 . |
| APA | Zhu, Minmin , Deng, Caozhuang , Zhang, Zhanfeng , Yang, Dan , Zhang, Haizhong , Wang, Linghua et al. Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites . | JOURNAL OF MANUFACTURING PROCESSES , 2025 , 139 , 126-132 . |
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The unclear p-type conduction mechanism and lack of reliable p-type Ga2O3 severely hinder Ga2O3-based high-voltage electronics. Here, we demonstrate in situ nitrogen (N) doping via metal-organic chemical vapor deposition homoepitaxy using N2O as oxygen source and acceptor dopant. Structural and compositional analyses confirm efficient N incorporation (favored by N-Ga bonding) compensating residual Si/H donors without compromising crystallinity. The Ga2O3:N epilayers achieve excellent p-type performance: 1.04 x 1018 cm-3 hole concentration, 0.47 cm2 V-1 s-1 mobility at room temperature, and 0.168 eV activation energy. A completely new insight into the p-type conduction mechanism in Ga2O3 is introduced, focusing on the crystallographic visualization of acceptors (N2-) and holes (O-), as well as the hole excitation process. It is suggested that careful suppression of the donor compensation effect and precise control of the N chemical potential, which leads to the fabrication of trace O- species solid-dissolved within Ga2O3, are essential for achieving high-hole-concentration p-type conduction in oxides.
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| GB/T 7714 | Lu, Yaoping , Jia, Lemin , Chen, Duanyang et al. Insight into the High Hole Concentration of p-Type Ga2O3 via In Situ Nitrogen Doping [J]. | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (17) : 4243-4251 . |
| MLA | Lu, Yaoping et al. "Insight into the High Hole Concentration of p-Type Ga2O3 via In Situ Nitrogen Doping" . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS 16 . 17 (2025) : 4243-4251 . |
| APA | Lu, Yaoping , Jia, Lemin , Chen, Duanyang , Li, Titao , Qi, Hongji , Xu, Xiaorui et al. Insight into the High Hole Concentration of p-Type Ga2O3 via In Situ Nitrogen Doping . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (17) , 4243-4251 . |
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Optimized inductively coupled plasma (ICP) etching process can improve the surface quality of (1-Ga2O3 thin film to enhance the power figure of merit of (1-Ga2O3 Schottky barrier diodes (SBDs). However, the mechanism of surface quality improvement of ICP etching is not yet clear. In this letter, we verified that the surface qualities of (1-Ga2O3 SBDs could be modified by varying the ratios of BCl3 and Ar etching plasmas. Moreover, electrical performance tests were conducted to verify that the improved surface quality can enhance the electrical properties. Benefitted from the high surface quality of (1-Ga2O3 epitaxial layer, the (1-Ga2O3 SBD without termination structure exhibits a low specific on-resistance (Ron,sp) of 4 m Omega & sdot;cm2 and high breakdown voltage (BV) of 1500 V. These results can pave the way for the preparation of high-performance (1-Ga2O3 power SBDs.
Keyword ：
Beta-phase gallium oxide Beta-phase gallium oxide Inductively coupled plasma etching Inductively coupled plasma etching Schottky barrier diode Schottky barrier diode Surface quality Surface quality
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| GB/T 7714 | Deng, Yicong , Chen, Desen , Li, Titao et al. Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode [J]. | MICRO AND NANOSTRUCTURES , 2025 , 199 . |
| MLA | Deng, Yicong et al. "Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode" . | MICRO AND NANOSTRUCTURES 199 (2025) . |
| APA | Deng, Yicong , Chen, Desen , Li, Titao , Zhu, Minmin , Xu, Xiaorui , Zhang, Haizhong et al. Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode . | MICRO AND NANOSTRUCTURES , 2025 , 199 . |
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Solar-blind ultraviolet photodetectors (SBUV-PDs) are utilized in various military and civilian fields, encompassing missile tracking, high-voltage detection, and fire warning systems. Ga2O3 emerges as the prime candidate for such PDs owing to its elevated bandgap, remarkable thermal stability, and facile fabrication process. The metal-semiconductor-metal (MSM) structure garners attention for its swift response time and straightforward preparation, thus becoming a focal point among diverse PD architectures. Nevertheless, the metal surface impedes optical absorption, thereby diminishing the quantum efficiency of the PD. In this work, we introduce a nanograting onto the Ga2O3 surface, which results in a 747-fold increase in responsivity in the SBUV region compared to a normal MSM grating-free structure. Metal gratings can induce surface plasmon polaritons (SPP), thereby augmenting the optical absorption of the PD and stimulating hot electrons to increase photocurrent. However, the broadband response caused by the introduction of metal gratings is a common problem. By optimizing the doping concentration of the Ga2O3 absorption layer, adjusting the incident light intensity, and reverse voltage, the problem of broadband response has been solved. The responsivity of the device in the non-SBUV region is suppressed 24-fold. This methodology holds promise as a reliable approach for fabricating high-performance SBUV-PDs.
Keyword ：
Ga2O3 Ga2O3 metal-semiconductor-metal (MSM) metal-semiconductor-metal (MSM) nanograting nanograting photodetector (PD) photodetector (PD) plasmon plasmon responsivity responsivity
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| GB/T 7714 | Li, Jialong , Yang, Dan , Lu, Xiaoqiang et al. Enhancing Ga2O3 Solar-Blind Photodetectors via Metal Nanogratings [J]. | IEEE SENSORS JOURNAL , 2025 , 25 (1) : 434-442 . |
| MLA | Li, Jialong et al. "Enhancing Ga2O3 Solar-Blind Photodetectors via Metal Nanogratings" . | IEEE SENSORS JOURNAL 25 . 1 (2025) : 434-442 . |
| APA | Li, Jialong , Yang, Dan , Lu, Xiaoqiang , Zhang, Haizhong , Zhu, Minmin . Enhancing Ga2O3 Solar-Blind Photodetectors via Metal Nanogratings . | IEEE SENSORS JOURNAL , 2025 , 25 (1) , 434-442 . |
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Photovoltaic solar-blind ultraviolet photodetectors (SBPDs) operate independently of an external power source, addressing critical demands in extreme environments, such as forest fire detection and atmospheric ozone layer monitoring. Gallium oxide (Ga2O3) offers significant potential for extreme applications due to its radiation resistance and high-temperature stability. Here, we present a novel homoepitaxy strategy to produce an "atomic smooth" step-flow Ga2O3 photosensitive layer, successfully fabricating device-grade Ga2O3/n+-Ga2O3 homojunctions for photovoltaic SBPDs. These devices exhibit a maximum open-circuit voltage of 1.0 V, an ultrahigh external quantum efficiency of 59.5%, and an ultrafast response time of 100 ns under zero bias, maintaining consistent performance even at 390 K. By implementing a 2D step-flow growth mode, both bulk and interface defects were effectively suppressed, achieving the desired band alignment. Furthermore, the optimized high-quality depletion region formed by the Ga2O3 layer facilitates enhanced carrier drift, resulting in an efficient carrier collection. This work fully explores the potential of Ga2O3 SBPDs for extreme applications and provides an effective design strategy for achieving photovoltaic detectors characterized by zero power consumption, high responsivity, and rapid response.
Keyword ：
Ga2O3 Ga2O3 homoepitaxy homoepitaxy open-circuit voltage open-circuit voltage solar-blind photodetector solar-blind photodetector step-flow step-flow
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| GB/T 7714 | Zhu, Shoudong , Zheng, Zhenjie , Lu, Yaoping et al. Ultrahigh-Performance Photovoltaic Ga2O3 Solar-Blind Ultraviolet Detectors via Two-Dimensional Step-Flow Growth and Drift Region Optimization [J]. | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (34) : 48523-48531 . |
| MLA | Zhu, Shoudong et al. "Ultrahigh-Performance Photovoltaic Ga2O3 Solar-Blind Ultraviolet Detectors via Two-Dimensional Step-Flow Growth and Drift Region Optimization" . | ACS APPLIED MATERIALS & INTERFACES 17 . 34 (2025) : 48523-48531 . |
| APA | Zhu, Shoudong , Zheng, Zhenjie , Lu, Yaoping , Long, Hao , Zhuang, Jiachang , Jia, Lemin et al. Ultrahigh-Performance Photovoltaic Ga2O3 Solar-Blind Ultraviolet Detectors via Two-Dimensional Step-Flow Growth and Drift Region Optimization . | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (34) , 48523-48531 . |
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The precise control of acceptor doping concentrations in epilayers is critical for fabricating key β-Ga2O3-based power electronic structures, including current-blocking layers, p-type epilayers, and drift layers. Unintentional nitrogen (N) compensating dopants introduced by N2O (a common oxygen precursor) during β-Ga2O3 metalorganic chemical vapor deposition growth significantly affects electrical properties. This study demonstrates that N concentration in epilayers is largely determined by growth temperature and surface adsorption efficiency. As the epitaxial temperature increases, the N doping concentration in the epilayer decreases. When the epitaxial temperature exceeds 1000 °C, the efficiency of N adsorption on β-Ga2O3 surfaces is influenced by both epitaxial parameters and substrate orientation. Modifying epitaxial parameters, especially by increasing chamber pressure, enhances the N concentration in β-Ga2O3 epilayers. Stronger N adsorption occurs on the (100)-plane compared to the (001)-plane epilayer; however, the (001)-plane epilayer allows better N concentration tuning through adjustments in parameters. First-principles calculations indicate that such observed differences in adsorption efficiency are attributable to variations in adsorption energies specific to each plane, coupled with competitive interactions between nitrogen (N) and oxygen (O) atoms during surface reactions. This study offers fundamental insights that advance the engineering of β-Ga2O3 homoepilayers for power electronics applications. © 2025 Author(s).
Keyword ：
Adsorption Adsorption Doping (additives) Doping (additives) Efficiency Efficiency Epilayers Epilayers Epitaxial growth Epitaxial growth Gallium compounds Gallium compounds Nitrogen Nitrogen Oxygen Oxygen Surface reactions Surface reactions
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| GB/T 7714 | Lu, Yaoping , Yang, Ancang , Li, Titao et al. In situ nitrogen doping of β-Ga2O3 during MOCVD homoepitaxy: A theoretical and experimental study [J]. | Applied Physics Letters , 2025 , 127 (7) . |
| MLA | Lu, Yaoping et al. "In situ nitrogen doping of β-Ga2O3 during MOCVD homoepitaxy: A theoretical and experimental study" . | Applied Physics Letters 127 . 7 (2025) . |
| APA | Lu, Yaoping , Yang, Ancang , Li, Titao , Zhang, Jinxin , Jia, Lemin , Chen, Duanyang et al. In situ nitrogen doping of β-Ga2O3 during MOCVD homoepitaxy: A theoretical and experimental study . | Applied Physics Letters , 2025 , 127 (7) . |
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High-entropy materials (HEMs) have attracted considerable research attention in battery applications due to exceptional properties such as remarkable structural stability, enhanced ionic conductivity, superior mechanical strength, and outstanding catalytic activity. These distinctive characteristics render HEMs highly suitable for various battery components, such as electrodes, electrolytes, and catalysts. This review systematically examines recent advances in the application of HEMs for energy storage, beginning with fundamental concepts, historical development, and key definitions. Three principal categories of HEMs, namely high-entropy alloys, high-entropy oxides, and high-entropy MXenes, are analyzed with a focus on electrochemical performance metrics such as specific capacity, energy density, cycling stability, and rate capability. The underlying mechanisms by which these materials enhance battery performance are elucidated in the discussion. Furthermore, the pivotal role of machine learning in accelerating the discovery and optimization of novel high-entropy battery materials is highlighted. The review concludes by outlining future research directions and potential breakthroughs in HEM-based battery technologies.
Keyword ：
High entropy alloys High entropy alloys High entropy battery materials High entropy battery materials High entropy MXenes High entropy MXenes High entropy oxides High entropy oxides Machine learning Machine learning
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| GB/T 7714 | Xin, Yangmei , Zhu, Minmin , Zhang, Haizhong et al. High-Entropy Materials: A New Paradigm in the Design of Advanced Batteries [J]. | NANO-MICRO LETTERS , 2025 , 18 (1) . |
| MLA | Xin, Yangmei et al. "High-Entropy Materials: A New Paradigm in the Design of Advanced Batteries" . | NANO-MICRO LETTERS 18 . 1 (2025) . |
| APA | Xin, Yangmei , Zhu, Minmin , Zhang, Haizhong , Wang, Xinghui . High-Entropy Materials: A New Paradigm in the Design of Advanced Batteries . | NANO-MICRO LETTERS , 2025 , 18 (1) . |
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In this paper, a vertical Ga2O3 Schottky barrier diode (SBD) with nitrogen (N)-doped protecting ring and mesa termination (NMT-SBD) is fabricated. In addition to the electric field optimization effect of the mesa termination, the NMT-SBD also features the N-doped protecting ring to reduce the electric field near the anode edge. This further increases the breakdown voltage (BV) and enables the Ni/Ga2O3 contact with a low barrier height to be used as the anode, leading to a low forward voltage (VF). The experimental results show that the device achieves a BV of 2.87 kV and a specific on resistance of 3.68 mΩ cm2, resulting in a high power figure of merit of 2.24 GW/cm2. Furthermore, the device exhibits a low VF (@100 A/cm2) of 1.3 V, confirming its excellent performance with low conduction loss. This work demonstrates a promising strategy for fabricating high-power Ga2O3 vertical Schottky barrier diode. © 2025 Author(s).
Keyword ：
Anode materials Anode materials Anodes Anodes Doping (additives) Doping (additives) Electric fields Electric fields Gallium compounds Gallium compounds Nickel compounds Nickel compounds Nitrogen Nitrogen
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| GB/T 7714 | Han, Xueli , Xu, Xiaorui , Wang, Zhengbo et al. 2.87 kV/3.68 mΩ cm2 low forward voltage Ga2O3 vertical SBD with nitrogen-doped protecting ring and mesa termination [J]. | Applied Physics Letters , 2025 , 127 (3) . |
| MLA | Han, Xueli et al. "2.87 kV/3.68 mΩ cm2 low forward voltage Ga2O3 vertical SBD with nitrogen-doped protecting ring and mesa termination" . | Applied Physics Letters 127 . 3 (2025) . |
| APA | Han, Xueli , Xu, Xiaorui , Wang, Zhengbo , Yang, Hanchao , Chen, Desen , Deng, Yicong et al. 2.87 kV/3.68 mΩ cm2 low forward voltage Ga2O3 vertical SBD with nitrogen-doped protecting ring and mesa termination . | Applied Physics Letters , 2025 , 127 (3) . |
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