Quantum　dot　(QD)　light-emitting　devices　operating　in　non-carrier-injection　electroluminescence　(NCIEL)　mode　have　attracted　attention　due　to　their　extremely　simple　structure.　Since　no　external　carriers　are　involved　in　electroluminescence,　elucidating　the　source　of　carriers　required　for　stable　device　operation　is　crucial.　It　is　valuable　to　understand　the　mechanism　of　operation　and　optimize　the　device　structure.　This　study　focuses　on　the　optoelectronic　properties　of　multilayer　QD　films　in　the　non-carrier-injection　mode.　The　experimental　results　show　that　the　luminescence　intensity　increases　rapidly　to　the　maximum　value　with　the　increase　of　AC　driving　voltage　and　then　decreases　gradually.　Similarly,　the　increase　in　AC　driving　frequency　leads　to　an　initial　rise　and　subsequent　decrease　in　luminescence　intensity.　In　addition,　the　emission　spectra　remained　consistent　in　terms　of　center　wavelength　and　half-peak　width　at　different　voltage　and　frequency　settings.　Combined　with　the　existence　of　an　insulating　organic　ligand　environment　between　QDs,　a　non-carrier-injection　luminescence　model　for　multilayer　QDs　based　on　the　principle　of　internal　field　emission　is　proposed.　This　study　is　expected　to　provide　methods　for　obtaining　advanced　QD-based　light-emitting　technology.　©　2024　Chinese　Vacuum　Society.　All　rights　reserved.