In　this　work,　t　he　i　nfluence　o　f　d　ifferent　s　urface　treatments　on　the　breakdown　voltage　(BV)　and　the　specific　on-state　resistance　(R-on,R-sp)　of　the　beta-phase　gallium　oxide　(beta-Ga2O3)　Schottky　barrier　diodes　(SBD)　is　investigated.　The　results　show　that　after　fast　inductively　coupled　plasma　(ICP)　etching,　slow　ICP　etching　and　piranha　treatment,　the　unreliable　surface　of　beta-Ga2O3　can　be　effectively　removed　with　small　surface　roughness　and　little　co-products,　thus　increasing　BV　from　141　V　to　724　V　and　reducing　R-on,R-　sp　from　5.1　m　Omega　center　dot　cm(2)　to　1.2　m　Omega　center　dot　cm(2).　Consequently,　the　results　validate　the　effectiveness　of　the　surface　treatments　and　can　provide　guidance　for　device　process　optimization.