In　this　work,　a　vertical　gallium　oxide　(Ga2O3)　Schottky　barrier　diode　(SBD)　with　suspended　field　plate-assisted　shallow　mesa　termination　(SFPM-SBD)　is　proposed　and　fabricated.　The　suspended　field　plate　is　achieved　by　using　Cl-2　in　the　ICP　etching　process　to　facilitate　isotropic　etching　of　Ga2O3.　Compared　with　shallow　mesa　SBD,　the　introduction　of　SFPM　can　further　optimize　the　electric　field　(E_Field)　distribution.　Consequently,　a　high　breakdown　voltage　(BV)　of　over　3.5　kV　and　a　low　specific　ON-resistance　of　5.77　m　Omega　&　sdot;cm(2)　are　achieved,　resulting　in　a　power　figure　of　merit　(PFOM)　＞2.12　GW/cm(2).　Furthermore,　the　large-area　device　with　3　x　3　mm(2)　is　fabricated,　achieving　a　BV　exceeding　1.5　kV　and　a　high　forward　current　of　12　A　at　2　V.　The　simplified　fabrication　process　of　the　SFPM-SBD,　combined　with　its　outstanding　performance,　makes　it　a　promising　candidate　for　multikilovolt　and　ampere-class　applications.