Optimized　inductively　coupled　plasma　(ICP)　etching　process　can　improve　the　surface　quality　of　(1-Ga2O3　thin　film　to　enhance　the　power　figure　of　merit　of　(1-Ga2O3　Schottky　barrier　diodes　(SBDs).　However,　the　mechanism　of　surface　quality　improvement　of　ICP　etching　is　not　yet　clear.　In　this　letter,　we　verified　that　the　surface　qualities　of　(1-Ga2O3　SBDs　could　be　modified　by　varying　the　ratios　of　BCl3　and　Ar　etching　plasmas.　Moreover,　electrical　performance　tests　were　conducted　to　verify　that　the　improved　surface　quality　can　enhance　the　electrical　properties.　Benefitted　from　the　high　surface　quality　of　(1-Ga2O3　epitaxial　layer,　the　(1-Ga2O3　SBD　without　termination　structure　exhibits　a　low　specific　on-resistance　(Ron,sp)　of　4　m　Omega　&　sdot;cm2　and　high　breakdown　voltage　(BV)　of　1500　V.　These　results　can　pave　the　way　for　the　preparation　of　high-performance　(1-Ga2O3　power　SBDs.