Quantum　dot　light-emitting　diodes　(QLEDs)　are　one　of　the　promising　candidates　for　next-generation　displays　due　to　their　outstanding　color　purity　and　tunability,　device　efficiency,　and　solution-processing　compatibility.　However,　the　commonly　used　hole　injection　layer　(HIL)　of　polyethylene　dioxythiophene:polystyrene　sulfonate　(PEDOT:PSS)　raises　concerns　about　inferior　device　stability　and　efficiency　due　to　acidic　and　hygroscopic　nature　and　unsatisfactory　energy　barriers.　Here,　we　proposed　a　simple　and　universal　HIL　design　strategy　to　achieve　efficient　and　stable　QLEDs　by　using　vanadium　oxide　V2O5-based　dual　HILs.　The　V2O5　film　facilitates　hole-selective　contacts　by　establishing　ohmic-like　interfaces　and　acting　as　a　blocker　to　prevent　back　transfer,　achieving　a　more　efficient　hole　injection　pathway　through　staircase　energy-level　alignment　of　the　HILs.　Additionally,　it　prevents　acidic　PEDOT:PSS　from　etching　indium　tin　oxide　(ITO)　anode　and　improves　its　surface　smoothness,　enhancing　the　stability　of　QLEDs.　Our　HIL　design　strategy-V2O5/PEDOT:PSS　dual　HIL-shows　its　performance　enhancement　capacity　for　all　red,　green,　and　blue　QLEDs　with　peak　external　quantum　efficiencies　(EQEs)　of　23.56%,　12.35%,　and　7.15%　and　corresponding　lifetimes　(T　95)　at　1000　cd/m(2)　are　5630,　280,　and　9　h,　respectively　(around　eight-fold　greater　than　those　of　solely　PEDOT:PSS　HIL-based　QLEDs).　Furthermore,　the　V2O5-based　dual-HILs　can　be　extended　to　inorganic/inorganic　HILs　from　V2O5/PEDOT:PSS　(inorganic/organic)　HILs,　where　V2O5/MoOx　HILs　demonstrate　similar　performance　enhancement　capacity　for　all　red,　green,　and　blue　QLEDs　in　device　efficiency　and　lifetime.　Our　V2O5-based　dual-HILs　are　expected　to　offer　a　simple　and　practical　way　to　achieve　a　long　lifetime　while　maintaining　the　efficiency　of　QLEDs.