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author:

Alsharafi, R. (Alsharafi, R..) [1] | Zhong, C. (Zhong, C..) [2] | Liu, Y. (Liu, Y..) [3] | Hu, H. (Hu, H..) [4] | Li, F. (Li, F..) [5]

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Scopus

Abstract:

Quantum dot light-emitting diodes (QLEDs) are one of the promising candidates for next-generation displays due to their outstanding color purity and tunability, device efficiency, and solution-processing compatibility. However, the commonly used hole injection layer (HIL) of polyethylene dioxythiophene:polystyrene sulfonate (PEDOT:PSS) raises concerns about inferior device stability and efficiency due to acidic and hygroscopic nature and unsatisfactory energy barriers. Here, we proposed a simple and universal HIL design strategy to achieve efficient and stable QLEDs by using vanadium oxide V $_{{\text{2}}}$ O $_{\text{5}}$ -based dual HILs. The V $_{\text{2}}$ O $_{\text{5}}$  film facilitates hole-selective contacts by establishing ohmic-like interfaces and acting as a blocker to prevent back transfer, achieving a more efficient hole injection pathway through staircase energy-level alignment of the HILs. Additionally, it prevents acidic PEDOT:PSS from etching indium tin oxide (ITO) anode and improves its surface smoothness, enhancing the stability of QLEDs. Our HIL design strategy—V $_{\text{2}}$ O $_{\text{5}}$ /PEDOT:PSS dual HIL-shows its performance enhancement capacity for all red, green, and blue QLEDs with peak external quantum efficiencies (EQEs) of 23.56%, 12.35%, and 7.15% and corresponding lifetimes (T $_{\text{95}})$  at 1000 cd/m $^{\text{2}}$  are 5630, 280, and 9 h, respectively (around eight-fold greater than those of solely PEDOT:PSS HIL-based QLEDs). Furthermore, the V $_{\text{2}}$ O $_{\text{5}}$ -based dual-HILs can be extended to inorganic/inorganic HILs from V $_{\text{2}}$ O $_{\text{5}}$ /PEDOT:PSS (inorganic/organic) HILs, where V $_{\text{2}}$ O $_{\text{5}}$ /MoO $_{\text{x}}$  HILs demonstrate similar performance enhancement capacity for all red, green, and blue QLEDs in device efficiency and lifetime. Our V $_{\text{2}}$ O $_{\text{5}}$ -based dual-HILs are expected to offer a simple and practical way to achieve a long lifetime while maintaining the efficiency of QLEDs. IEEE

Keyword:

Dual hole injection layer (HIL) Electrons energy-level alignment Indium tin oxide light-emitting diodes Light emitting diodes Performance evaluation quantum dot (QD) Quantum dots Substrates vanadium oxide Zinc oxide

Community:

  • [ 1 ] [Alsharafi R.]college of Physics and Information Engineering, and Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou University, Fuzhou, China
  • [ 2 ] [Zhong C.]college of Physics and Information Engineering, and Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou University, Fuzhou, China
  • [ 3 ] [Liu Y.]Strait Institute of Flexible Electronics (SIFE), Future Technologies, Fujian Normal University, Fuzhou, China
  • [ 4 ] [Hu H.]college of Physics and Information Engineering, and Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou University, Fuzhou, China
  • [ 5 ] [Li F.]college of Physics and Information Engineering, and Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou University, Fuzhou, China

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Source :

IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year: 2024

Issue: 8

Volume: 71

Page: 1-8

2 . 9 0 0

JCR@2023

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ESI Highly Cited Papers on the List: 0 Unfold All

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Chinese Cited Count:

30 Days PV: 1

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