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author:

Wei, Cong (Wei, Cong.) [1] | Wei, Rongshan (Wei, Rongshan.) [2] (Scholars:魏榕山) | Huang, Lijie (Huang, Lijie.) [3] | Huang, Gongxing (Huang, Gongxing.) [4] | Lai, Jinze (Lai, Jinze.) [5] | Tan, Zhichao (Tan, Zhichao.) [6]

Indexed by:

EI Scopus SCIE

Abstract:

This article presents a dynamic range (DR) enhanced discrete-time delta-sigma modulator (DTDSM) applied to the Internet of Things (IoT). It is based on an asynchronous 1.5 -bit successive-approximation-resister (SAR) quantizer and a tri-level feedback capacitive digital -to -analog converter (CDAC), eliminating the dynamic element matching (DEM) overhead. The proposed DR enhancement (DRE) technique based on a variable threshold (VTH) allows the system to achieve maximum benefits at different input amplitudes. The system is configured in a high loop gain mode at small input amplitudes, providing the system with a stronger noise-shaping (NS) capability. The system is configured in the maximum stable amplitude (MSA) mode for large input amplitudes. In addition, we modified the working model of the cascoded floating inverter amplifier (FIA) in the weak inversion region. The prototype DTDSM is implemented in a 180-nm CMOS process, achieving a 94.7 -dB DR and 92.4 -dB signal-to-noise-and-distortion ratio (SNDR) at a 700 -Hz bandwidth with only 2.3-mu W power consumption. As a result, the Schreier figure-of-merit (FoM) for SNDR and DR is 177.2 and 179.5 dB, respectively.

Keyword:

Analog-to-digital converter (ADC) cascoded floating inverter amplifier (FIA) discrete-time delta-sigma modulator (DTDSM) dynamic range enhancement (DRE) tri-level capacitive digital-to-analog converter (CDAC)

Community:

  • [ 1 ] [Wei, Cong]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350116, Peoples R China
  • [ 2 ] [Wei, Rongshan]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350116, Peoples R China
  • [ 3 ] [Huang, Lijie]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350116, Peoples R China
  • [ 4 ] [Huang, Gongxing]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350116, Peoples R China
  • [ 5 ] [Lai, Jinze]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350116, Peoples R China
  • [ 6 ] [Tan, Zhichao]Zhejiang Univ, Coll Informat & Elect Engn, Hangzhou 310063, Peoples R China

Reprint 's Address:

  • 魏榕山

    [Wei, Rongshan]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350116, Peoples R China

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Source :

IEEE JOURNAL OF SOLID-STATE CIRCUITS

ISSN: 0018-9200

Year: 2024

Issue: 9

Volume: 59

Page: 2848-2857

4 . 6 0 0

JCR@2023

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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