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author:

Wang, Kun (Wang, Kun.) [1] | Li, Wenhao (Li, Wenhao.) [2] | Liao, Yitao (Liao, Yitao.) [3] | Li, Junlong (Li, Junlong.) [4] | Chen, Rong (Chen, Rong.) [5] | Chen, Qi (Chen, Qi.) [6] | Shi, Bo (Shi, Bo.) [7] | Kim, Dae Hun (Kim, Dae Hun.) [8] | Park, Jae Hyeon (Park, Jae Hyeon.) [9] | Zhang, Yongai (Zhang, Yongai.) [10] (Scholars:张永爱) | Zhou, Xiongtu (Zhou, Xiongtu.) [11] (Scholars:周雄图) | Wu, Chaoxing (Wu, Chaoxing.) [12] (Scholars:吴朝兴) | Liu, Zhiqiang (Liu, Zhiqiang.) [13] | Guo, Tailiang (Guo, Tailiang.) [14] (Scholars:郭太良) | Kim, Tae Whan (Kim, Tae Whan.) [15]

Indexed by:

EI Scopus SCIE

Abstract:

Data security is a major concern in digital age, which generally relies on algorithm-based mathematical encryption. Recently, encryption techniques based on physical principles are emerging and being developed, leading to the new generation of encryption moving from mathematics to the intersection of mathematics and physics. Here, device-level encryption with ideal security is ingeniously achieved using modulation of the electron-hole radiative recombination in a GaN-light-emitting diode (LED). When a nano-LED is driven in the non-carrier injection mode, the oscillation of confined electrons can split what should be a single light pulse into multiple pulses. The morphology (amplitude, shape, and pulse number) of those history-dependent multiple pulses that act as carriers for transmitted digital information depends highly on the parameters of the driving signals, which makes those signals mathematically uncrackable and can increase the volume and security of transmitted information. Moreover, a hardware and software platform are designed to demonstrate the encrypted data transmission based on the device-level encryption method, enabling recognition of the entire ASCII code table. The device-level encryption based on splitting electroluminescence provides an encryption method during the conversion process of digital signals to optical signals and can improve the security of LED-based communication. An ultrasimple nanoscale light-emitting diode (LED) based on a three-dimensional confined electron system is demonstrated. By employing the non-carrier injection nano LED (NCI-nLED), a device-level encryption is proposed, in which multiple pulses acts as carriers for transmitted digital information, providing an alternative encryption platform and method for converting digital signals to optical signals.image

Keyword:

carrier dynamics electroluminescence electron oscillation encryption nanoscale light-emitting diodes

Community:

  • [ 1 ] [Wang, Kun]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Li, Wenhao]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Liao, Yitao]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Li, Junlong]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Zhang, Yongai]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Zhou, Xiongtu]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 7 ] [Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 8 ] [Guo, Tailiang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 9 ] [Chen, Rong]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 10 ] [Zhang, Yongai]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 11 ] [Zhou, Xiongtu]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 12 ] [Wu, Chaoxing]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 13 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 14 ] [Chen, Qi]Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China
  • [ 15 ] [Shi, Bo]Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China
  • [ 16 ] [Liu, Zhiqiang]Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China
  • [ 17 ] [Kim, Dae Hun]Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
  • [ 18 ] [Park, Jae Hyeon]Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
  • [ 19 ] [Kim, Tae Whan]Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea

Reprint 's Address:

  • [Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China;;[Guo, Tailiang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China;;[Wu, Chaoxing]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China;;[Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China;;[Liu, Zhiqiang]Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China;;[Kim, Tae Whan]Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea;;

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Source :

ADVANCED MATERIALS

ISSN: 0935-9648

Year: 2023

Issue: 3

Volume: 36

2 7 . 4

JCR@2023

2 7 . 4 0 0

JCR@2023

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 32

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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