Perovskite　quantum　dot　light-emitting　diodes　(QLEDs)with　highcolor　purity　and　wide　color　gamut　have　good　application　prospectsin　the　next　generation　of　display　technology.　However,　colloidal　perovskitequantum　dots　(PQDs)　may　introduce　a　large　number　of　defects　duringthe　film-forming　process,　which　is　not　conducive　to　the　luminous　efficiencyof　the　device.　Meanwhile,　the　disordered　film　formation　of　PQDs　willform　interfacial　defects　and　reduce　the　device　performance.　Here,we　report　an　interface-induced　crystallinity　enhancement　(IICE)　strategyto　increase　the　crystallinity　of　PQDs　at　the　hole　transport　layer(HTL)/PQD　interface.　As　a　result,　both　the　Br-　vacanciesin　the　PQD　film　and　the　interfacial　defects　were　well　passivated　andthe　leakage　current　was　also　suppressed.　We　achieved　QLEDs　with　amaximum　external　quantum　efficiency　(EQE)　of　16.45%　and　current　efficiency(CE)　of　61.77　cd/A,　showing　improved　performance　to　more　than　twicethat　of　the　control　devices.　The　IICE　strategy　paves　a　new　way　toenhance　the　crystallinity　of　PQD　films,　so　as　to　improve　the　performanceof　QLEDs　for　application　in　the　future　display　field.