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author:

Ju, Songman (Ju, Songman.) [1] | Mao, Chaomin (Mao, Chaomin.) [2] | Liu, Yang (Liu, Yang.) [3] | Zhu, Yangbin (Zhu, Yangbin.) [4] | Xu, Zhongwei (Xu, Zhongwei.) [5] (Scholars:徐中炜) | Yang, Kaiyu (Yang, Kaiyu.) [6] (Scholars:杨开宇) | Guo, Tailiang (Guo, Tailiang.) [7] (Scholars:郭太良) | Hu, Hailong (Hu, Hailong.) [8] (Scholars:胡海龙) | Li, Fushan (Li, Fushan.) [9] (Scholars:李福山)

Indexed by:

EI Scopus SCIE

Abstract:

Perovskite quantum dots light-emitting diodes (PQLEDs), due to the advantages of high luminous efficiency, high color purity, adjustable spectral range, etc., has an excellent prospect in the next generation of high-definition displays. As an indispensable part of displays, blue PQLEDs are usually achieved by mixing halogen, which, however, will lead to halogen ion migration and phase separation of perovskite material at high temperature and bias pressure, thus make the electroluminescent spectrum redshift. In this manuscript, we propose a strategy to inhibit phase separation of blue perovskite quantum dots (PQDs) by introducing alkali metal, and obtain stable perovskite quantum dot light-emitting diodes. The PQLEDs based on this strategy show an external quantum efficiency (EQE) of 1.87% and a brightness of 3757 cd m- 2, and can still guarantee stable electroluminescence (EL) spectra at a bias of up to 14 V. The work is beneficial for probing into the mechanism of suppressing the phase separation of mixed halogen blue PQDs and offer a promising strategy to enhance the color stability of blue PQLEDs.

Keyword:

Blue light-emitting diodes Perovskite quantum dots Phase separation Spectral stability

Community:

  • [ 1 ] [Ju, Songman]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 2 ] [Mao, Chaomin]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 3 ] [Zhu, Yangbin]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 4 ] [Xu, Zhongwei]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 5 ] [Yang, Kaiyu]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 6 ] [Guo, Tailiang]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 7 ] [Hu, Hailong]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 8 ] [Li, Fushan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 9 ] [Ju, Songman]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350116, Peoples R China
  • [ 10 ] [Yang, Kaiyu]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350116, Peoples R China
  • [ 11 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350116, Peoples R China
  • [ 12 ] [Hu, Hailong]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350116, Peoples R China
  • [ 13 ] [Li, Fushan]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350116, Peoples R China
  • [ 14 ] [Liu, Yang]Fujian Normal Univ, Straits Inst Flexible Elect, Future Technol, SIFE, Fuzhou 350117, Peoples R China

Reprint 's Address:

  • [Li, Fushan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China;;

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Source :

ORGANIC ELECTRONICS

ISSN: 1566-1199

Year: 2022

Volume: 113

3 . 2

JCR@2022

2 . 7 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:55

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 5

SCOPUS Cited Count: 8

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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