The　demonstration　of　high-resolution　quantum-dot　light-emitting　diodes　by　transfer　printing　could　prove　useful　for　next-generation　displays.　With　the　ever-growing　demand　for　a　greater　number　of　pixels,　next-generation　displays　have　challenging　requirements　for　resolution　as　well　as　colour　gamut.　Here,　to　meet　this　need,　quantum-dot　light-emitting　diodes　(QLEDs)　with　an　ultrahigh　pixel　resolution　of　9,072-25,400　pixels　per　inch　are　realized　via　transfer　printing　combined　with　the　Langmuir-Blodgett　film　technology.　To　reduce　the　leakage　current　of　the　devices,　a　honeycomb-patterned　layer　of　wide-bandgap　quantum　dots　is　embedded　between　the　light-emitting　quantum-dot　pixels　as　a　non-emitting　charge　barrier　layer.　Red　and　green　QLEDs　are　demonstrated.　Notably,　the　red　devices　achieve　a　brightness　of　up　to　262,400　cd　m(-2)　at　an　applied　voltage　of　8　V　and　a　peak　external　quantum　efficiency　of　14.72%.　This　work　provides　a　promising　way　for　achieving　ultrahigh-resolution　QLED　devices　with　high　performance.