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author:

Nie, Junyang (Nie, Junyang.) [1] | Yan, Qun (Yan, Qun.) [2] | Li, Min (Li, Min.) [3] | Huang, Zhonghang (Huang, Zhonghang.) [4] | Zhang, Yongai (Zhang, Yongai.) [5] (Scholars:张永爱) | Zhou, Xiongtu (Zhou, Xiongtu.) [6] (Scholars:周雄图) | Alfonso, Augusto Andres Iribarren (Alfonso, Augusto Andres Iribarren.) [7] | Sun, Jie (Sun, Jie.) [8] (Scholars:孙捷)

Indexed by:

EI

Abstract:

This paper reports our works on implementation of the concept of highly integrated semiconductor information display (HISID). Micro light-emitting diodes (μ-LEDs) within dimensions of 15 μm × 25 μm were transferred onto glass-based display panels with a mass transfer method. A thick Cr/Al/Ti/Pt/Au interconnection metal was deposited on the glass substrate to form the passive matrix driving structure. This approach has the potential to mass-produce high performance novel display device. © 2020 ITE and SID.

Keyword:

Display devices Glass Light emitting diodes Mass transfer Substrates

Community:

  • [ 1 ] [Nie, Junyang]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350117, China
  • [ 2 ] [Nie, Junyang]Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 3 ] [Nie, Junyang]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 4 ] [Yan, Qun]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350117, China
  • [ 5 ] [Yan, Qun]Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 6 ] [Yan, Qun]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 7 ] [Li, Min]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350117, China
  • [ 8 ] [Li, Min]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 9 ] [Huang, Zhonghang]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350117, China
  • [ 10 ] [Huang, Zhonghang]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 11 ] [Zhang, Yongai]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350117, China
  • [ 12 ] [Zhang, Yongai]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 13 ] [Zhou, Xiongtu]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350117, China
  • [ 14 ] [Zhou, Xiongtu]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 15 ] [Alfonso, Augusto Andres Iribarren]Instituto de Ciencia y Tecnología de Materiales (IMRE), Universidad de La Habana, Zapata s/n esquina G, Vedado, Plaza, La Habana; 10400, Cuba
  • [ 16 ] [Sun, Jie]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350117, China
  • [ 17 ] [Sun, Jie]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China

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Source :

ISSN: 1883-2490

Year: 2021

Volume: 27

Page: 770-772

Language: English

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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