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Abstract:
This paper reports our works on implementation of the concept of highly integrated semiconductor information display (HISID). Micro light-emitting diodes (μ-LEDs) within dimensions of 15 μm × 25 μm were transferred onto glass-based display panels with a mass transfer method. A thick Cr/Al/Ti/Pt/Au interconnection metal was deposited on the glass substrate to form the passive matrix driving structure. This approach has the potential to mass-produce high performance novel display device. © 2020 ITE and SID.
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ISSN: 1883-2490
Year: 2021
Volume: 27
Page: 770-772
Language: English
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 3
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