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author:

Li, Bei-Bei (Li, Bei-Bei.) [1] | Shao, Yan-Qun (Shao, Yan-Qun.) [2] (Scholars:邵艳群) | Zhu, Jun-Qiu (Zhu, Jun-Qiu.) [3] | Tang, Dian (Tang, Dian.) [4] (Scholars:唐电)

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Abstract:

In order to obtain a high specific capacitance, Ti/Ir0.4Sn0.6O2 electrodes were prepared by thermal decomposition. The structure, surface morphology and electrochemical properties of the Ti/Ir0.4Sn0.6O2 electrodes were investigated by X-ray diffraction (XRD), thermal analysis, scanning electron microscopy (SEM) and cyclic voltammetry (CV). The results show that the crystallization temperature of Ti/Ir0.4Sn0.6O2 electrode material is up to 360°C. Many small white particles on the electrode surface which are mainly composed of active oxide can be observed when it is annealed at 320°C. The specific capacitance is greatly affected by annealing temperature. The value of capacitance is small and its reversibility is very poor when the annealing temperature is 280°C. The maximum value of specific capacitance of the electrode annealed at 320°C is 454 F/g. The specific capacitance increases as the charge-discharge cycle count is increased. After 9000 cycles, the specific capacitance just starts to decrease. Even after 10000 cycles, it is still maintained 10% higher than that of the first cycle and the value is 493 F/g.

Keyword:

Annealing Capacitance Cyclic voltammetry Decomposition Electrodes Scanning electron microscopy Thermoanalysis Tin X ray diffraction

Community:

  • [ 1 ] [Li, Bei-Bei]Institute for Materials Research, Fuzhou University, Fuzhou 350108, China
  • [ 2 ] [Shao, Yan-Qun]Institute for Materials Research, Fuzhou University, Fuzhou 350108, China
  • [ 3 ] [Zhu, Jun-Qiu]Institute for Materials Research, Fuzhou University, Fuzhou 350108, China
  • [ 4 ] [Tang, Dian]Institute for Materials Research, Fuzhou University, Fuzhou 350108, China

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Source :

Transactions of Materials and Heat Treatment

ISSN: 1009-6264

CN: 11-4545/TG

Year: 2012

Issue: 2

Volume: 33

Page: 17-20

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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