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author:

Li, B.-B. (Li, B.-B..) [1] | Shao, Y.-Q. (Shao, Y.-Q..) [2] | Zhu, J.-Q. (Zhu, J.-Q..) [3] | Tang, D. (Tang, D..) [4]

Indexed by:

Scopus PKU CSCD

Abstract:

In order to obtain a high specific capacitance, Ti/Ir 0.4Sn 0.6O 2 electrodes were prepared by thermal decomposition. The structure, surface morphology and electrochemical properties of the Ti/Ir 0.4Sn 0.6O 2 electrodes were investigated by X-ray diffraction (XRD), thermal analysis, scanning electron microscopy (SEM) and cyclic voltammetry (CV). The results show that the crystallization temperature of Ti/Ir 0.4Sn 0.6O 2 electrode material is up to 360°C. Many small white particles on the electrode surface which are mainly composed of active oxide can be observed when it is annealed at 320°C. The specific capacitance is greatly affected by annealing temperature. The value of capacitance is small and its reversibility is very poor when the annealing temperature is 280°C. The maximum value of specific capacitance of the electrode annealed at 320°C is 454 F/g. The specific capacitance increases as the charge-discharge cycle count is increased. After 9000 cycles, the specific capacitance just starts to decrease. Even after 10000 cycles, it is still maintained 10% higher than that of the first cycle and the value is 493 F/g.

Keyword:

Electrode material; IrO 2-SnO 2; Specific capacitance

Community:

  • [ 1 ] [Li, B.-B.]Institute for Materials Research, Fuzhou University, Fuzhou 350108, China
  • [ 2 ] [Shao, Y.-Q.]Institute for Materials Research, Fuzhou University, Fuzhou 350108, China
  • [ 3 ] [Zhu, J.-Q.]Institute for Materials Research, Fuzhou University, Fuzhou 350108, China
  • [ 4 ] [Tang, D.]Institute for Materials Research, Fuzhou University, Fuzhou 350108, China

Reprint 's Address:

  • [Shao, Y.-Q.]Institute for Materials Research, Fuzhou University, Fuzhou 350108, China

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Source :

Transactions of Materials and Heat Treatment

ISSN: 1009-6264

Year: 2012

Issue: 2

Volume: 33

Page: 17-20

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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