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author:

Liu, Yang (Liu, Yang.) [1] | Li, Fushan (Li, Fushan.) [2] | Xu, Zhongwei (Xu, Zhongwei.) [3] | Zheng, Congxiu (Zheng, Congxiu.) [4] | Guo, Tailiang (Guo, Tailiang.) [5] | Xie, Xiangwei (Xie, Xiangwei.) [6] | Qian, Lei (Qian, Lei.) [7] | Fu, Dong (Fu, Dong.) [8] | Yan, Xiaolin (Yan, Xiaolin.) [9]

Indexed by:

EI

Abstract:

Quantum dot light emitting diodes (QLEDs) are increasingly attractive owing to their compatibility with the inkjet printing process and potential application in low-cost large-area full-color pixelated display. The strategy for controlling the morphology of the quantum dot layer is definitely critical for realizing all-solution processed QLEDs with high performance, which certainly requires in-depth thinking regarding the design of ink composition and their optimization in the printing process. Herein, by carefully controlling the quantum dot ink composition and physicochemical properties, we demonstrate that the viscosity, contact angle, and the three-phase contact line moving would affect the final morphology of the quantum dot film formed by inkjet printing. We achieved coffee ring-free and low-roughness quantum dot film, and all-solution processed QLEDs with normal structure were fabricated for the first time. The devices have a low turn-on voltage of 2.0 V, a luminance of 12100 cd/m2at the voltage of 12 V, and a maximum current efficiency of 4.44 cd/A at the luminance of 1974 cd/m2, which is the best result to date for inkjet-printed red QLEDs. The results will pave the way for future application of inkjet printing in solution processed pixelated QLED display. © 2017 American Chemical Society.

Keyword:

Ink Ink jet printing Luminance Magnetic bubbles Nanocrystals Organic light emitting diodes (OLED) Printing presses Quantum efficiency Semiconductor quantum dots Thin films

Community:

  • [ 1 ] [Liu, Yang]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 2 ] [Li, Fushan]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 3 ] [Xu, Zhongwei]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 4 ] [Zheng, Congxiu]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 5 ] [Guo, Tailiang]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 6 ] [Xie, Xiangwei]TCL Corperate Research, Shenzhen; 518057, China
  • [ 7 ] [Qian, Lei]TCL Corperate Research, Shenzhen; 518057, China
  • [ 8 ] [Fu, Dong]TCL Corperate Research, Shenzhen; 518057, China
  • [ 9 ] [Yan, Xiaolin]TCL Corperate Research, Shenzhen; 518057, China

Reprint 's Address:

  • [li, fushan]institute of optoelectronic technology, fuzhou university, fuzhou; 350002, china

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Source :

ACS Applied Materials and Interfaces

ISSN: 1944-8244

Year: 2017

Issue: 30

Volume: 9

Page: 25506-25512

8 . 0 9 7

JCR@2017

8 . 5 0 0

JCR@2023

ESI HC Threshold:306

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 162

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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