In　this　work,　a　novel　vertical　quantum-dot　light-emitting　transistor　(VQLET)　based　on　a　vertical　organic　thin-film　transistor　is　successfully　fabricated.　Benefiting　from　the　new　vertical　architecture,　the　VQLET　is　able　to　afford　an　extremely　high　current　density,　which　allows　most　of　the　organic　thin　film　transistors　(OTFT)　even　with　low　mobility　(for　instance,　poly(3-hexylthiophene))　to　drive　a　quantum-dot　light-emitting　diode　(QLED),　which　was　previously　unavailable.　Moreover,　the　hole　injection　barrier　could　be　modulated　by　the　additional　gate　electrode,　which　precisely　optimizes　the　charge　balance　in　the　device,　a　critical　issue　in　QLED,　resulting　in　the　precise　control　of　current　density　and　brightness　of　the　VQLET.　The　VQLET　shows　a　high　performance　with　a　maximum　current　efficiency　of　37　cd/A.　Furthermore,　integrating　OTFT　and　QLED　into　a　single　device,　the　VQLET　features　drastic　advantages　by　realizing　active　matrix　quantum-dot　light-emitting　diodes　(AMQLEDs),　which　significantly　reduces　the　number　of　transistors　and　frees　the　large　area　fraction　occupied　by　transistors.　Hence,　these　results　indicate　that　the　VQLET　provides　a　new　strategy　for　realizing　a　low-cost,　solution-processed,　high-performance　OTFT-AMQLED　for　the　flat　panel　display　technology.　Moreover,　the　novel　design　offers　a　unique　method　to　exquisitely　control　the　charge　balance　and　maximize　the　efficiency　the　QLED.　©　2019　American　Chemical　Society.