The　functionalization　of　graphene　oxide　(GO)　sheets　with　polyimide　(PI)　enables　the　layer-by-layer　fabrication　of　a　GO-PI　hybrid　resistive-switch　device　and　leads　to　high　reproducibility　of　the　memory　effect.　The　current-voltage　curves　for　the　as-fabricated　device　exhibit　multilevel　resistive-switch　properties　under　various　reset　voltages.　The　capacitance-voltage　characteristics　for　a　capacitor　based　on　GO-PI　nanocomposite　indicate　that　the　electrical　switching　may　originate　from　the　charge　trapping　in　GO　sheets.　The　high　device-to-device　uniformity　and　unique　memory　properties　of　the　device　make　it　an　attractive　candidate　for　applications　in　next-generation　high-density　nonvolatile　flash　memories.　(C)　2011　American　Institute　of　Physics.　[doi:10.1063/1.3619815]