Cu2ZnSnS4　(CZTS)　thin　films　were　prepared　by　sol-gel　method　and　sulfurization　process.　The　effects　of　the　sulfurization　temperature　on　the　structural,　morphological,　compositional,　and　opto-electrical　properties　of　the　CZTS　films　were　investigated.　X-ray　diffraction　and　Raman　spectroscopy　analyses　confirmed　the　formation　of　CZTS　films.　With　increasing　sulfurization　temperature,　the　crystallinity　of　the　films　was　enhanced,　which　was　accompanied　by　metallic　deficiency,　especially　tin　loss.　When　the　sulfurization　temperature　was　increased　from　460　to　540　degrees　C,　the　optical　band-gap　value　decreased　from　1.63　to　1.38　eV,　while　the　resistivity　and　mobility　increased　from1.415　to　1313　Omega.cm　and　from　0.372　to　7.231　cm(2)/V.s,　respectively.　The　best　CZTS　film　properties　with　a　bandgap　of　1.47　eV,　resistivity　of　581.5　Omega.cm,　carrier　concentration　of　2.165　x　10(16)　cm(-3)　and　mobility　of　1.411　cm(2)/(V.s)　were　achieved　at　a　sulfurization　temperature　of　500　degrees　C,　and　make　the　films　suitable　as　absorbers　for　solar　cells.　(C)　2014　Elsevier　B.V.　All　rights　reserved.