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author:

Long, Bo (Long, Bo.) [1] | Cheng, Shuying (Cheng, Shuying.) [2] | Lai, Yunfeng (Lai, Yunfeng.) [3] | Zhou, Haifang (Zhou, Haifang.) [4] | Yu, Jinling (Yu, Jinling.) [5] | Zheng, Qiao (Zheng, Qiao.) [6]

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EI

Abstract:

Cu2ZnSnS4 (CZTS) thin films were prepared by sol-gel method and sulfurization process. The effects of the sulfurization temperature on the structural, morphological, compositional, and opto-electrical properties of the CZTS films were investigated. X-ray diffraction and Raman spectroscopy analyses confirmed the formation of CZTS films. With increasing sulfurization temperature, the crystallinity of the films was enhanced, which was accompanied by metallic deficiency, especially tin loss. When the sulfurization temperature was increased from 460 to 540 °C, the optical band-gap value decreased from 1.63 to 1.38 eV, while the resistivity and mobility increased from 1.415 to 1313 Ω·cm and from 0.372 to 7.231 cm2/V·s, respectively. The best CZTS film properties with a bandgap of 1.47 eV, resistivity of 581.5 Ω·cm, carrier concentration of 2.165 × 1016 cm- 3 and mobility of 1.411 cm2/(V·s) were achieved at a sulfurization temperature of 500 °C, and make the films suitable as absorbers for solar cells. © 2014 Elsevier B.V. All rights reserved.

Keyword:

Carrier concentration Carrier mobility Copper compounds Crystallinity Deposition Electric properties Energy gap Film preparation IV-VI semiconductors Layered semiconductors Optical properties Solar absorbers Sol-gel process Sol-gels Sulfur compounds Temperature Thin films Tin compounds Zinc sulfide

Community:

  • [ 1 ] [Long, Bo]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 2 ] [Cheng, Shuying]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 3 ] [Lai, Yunfeng]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 4 ] [Zhou, Haifang]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 5 ] [Yu, Jinling]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 6 ] [Zheng, Qiao]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China

Reprint 's Address:

  • [cheng, shuying]college of physics and information engineering, institute of micro-nano devices and solar cells, fuzhou university, fuzhou; 350108, china

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Source :

Thin Solid Films

ISSN: 0040-6090

Year: 2014

Volume: 573

Page: 117-121

1 . 7 5 9

JCR@2014

2 . 0 0 0

JCR@2023

ESI HC Threshold:355

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 35

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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