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author:

Zhang, Y. A. (Zhang, Y. A..) [1] (Scholars:张永爱) | Chu, Z. H. (Chu, Z. H..) [2] | Zhou, X. T. (Zhou, X. T..) [3] (Scholars:周雄图) | Guo, T. L. (Guo, T. L..) [4] (Scholars:郭太良)

Indexed by:

EI Scopus SCIE

Abstract:

A planar-gate surface-conduction electron source with ZnO nanorods has been successfully fabricated, where ZnO nanorods deposited on the cathode are used as field emission emitters and ZnO nanorods deposited in the gap between cathode and gate electrode (C-G gap) are used as surface-conduction emitters. Field emission investigations indicate that the turn-on voltage at emission current of 10 mu A is approximately 85 V. The emission current and conduction current reach to 520 V and 450 V at the gate voltage and anode voltage of 140 V and 2000 V, respectively. High electron emission efficiency (56.2%) is obtained at low gate voltage of 140 V. The maximum brightness can reach 1200 cd/m(2) and the emission current fluctuation is smaller than 5% for 6 h. These results indicate that the electron source based on the planar-gate surface-conduction triode with ZnO emitters has efficient field emission characteristics. (C) 2015 Elsevier B.V. All rights reserved.

Keyword:

Electron source Field emission Planar-gate Surface-conduction ZnO emitters

Community:

  • [ 1 ] [Zhang, Y. A.]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350002, Peoples R China
  • [ 2 ] [Chu, Z. H.]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350002, Peoples R China
  • [ 3 ] [Zhou, X. T.]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350002, Peoples R China
  • [ 4 ] [Guo, T. L.]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350002, Peoples R China

Reprint 's Address:

  • 周雄图

    [Zhou, X. T.]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350002, Peoples R China

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Source :

JOURNAL OF ALLOYS AND COMPOUNDS

ISSN: 0925-8388

Year: 2015

Volume: 644

Page: 71-76

3 . 0 1 4

JCR@2015

5 . 8 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:335

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 4

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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