21.2: Fabrication and properties of planar-gate-type triode with CNTs emitters for backlight unit - Details

author：

Zhang, Yong-Ai (Zhang, Yong-Ai.) ^[1] (Scholars：张永爱) | Ye, Yun (Ye, Yun.) ^[2] (Scholars：叶芸) | Lin, Jin-Yang (Lin, Jin-Yang.) ^[3] | You, Yu-Xiang (You, Yu-Xiang.) ^[4] | Zhang, Jie (Zhang, Jie.) ^[5] (Scholars：章杰) | Guo, Tai-Liang (Guo, Tai-Liang.) ^[6] (Scholars：郭太良) Unfold

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Abstract：

A　planar-gate-type　triode　with　CNTs　emitters　was　fabricated　by　photolithography,　wet　etching　and　electrophoresis　deposition.　Field　emission　characteristics　of　planar-gate-type　triode　was　studied.　These　results　showed　that　the　device　had　a　stability　of　field　emission　performance　and　long　time,　which　was　used　for　the　fabrication　of　backlight　unit　in　LCD.　©　2010　SID.

Keyword：

Carbon nanotubes Deposition Electrophoresis Fabrication Field emission Triodes Wet etching

Community：

[ 1 ] [Zhang, Yong-Ai]Institute of Optoelectronic Display Technology, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 2 ] [Ye, Yun]Institute of Optoelectronic Display Technology, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 3 ] [Lin, Jin-Yang]Institute of Optoelectronic Display Technology, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 4 ] [You, Yu-Xiang]Institute of Optoelectronic Display Technology, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 5 ] [Zhang, Jie]Institute of Optoelectronic Display Technology, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 6 ] [Guo, Tai-Liang]Institute of Optoelectronic Display Technology, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China

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21.2: Fabrication and properties of planar-gate-type triode with CNTs emitters for backlight unit
2010，Digest of Technical Papers - SID International Symposium

21.2: Fabrication and properties of planar-gate-type triode with CNTs emitters for backlight unit
2010，48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Study on field emission cathode based on planar-gate triode with carbon nanotubes by electrophoretic deposition
2011，Journal of Functional Materials
Development of planar-gate-type CNT-FED back light unit for LCD
2011，Journal of Optoelectronics Laser
Fabrication and field emission characteristics of a novel planar-gate electron source with patterned carbon nanotubes for backlight units
2013，Journal of Semiconductors

Source ：

ISSN： 0097-966X

Year： 2010

Volume： 41 1

Page： 301-303

Language： English

Cited Count：

WoS CC Cited Count：

30 Days PV： 3

Affiliated Colleges：

物理与信息工程学院、微电子学院本学院/部未明确归属的数据

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