Theoretical Analysis of Vertical β-Ga2O3 Schottky Barrier Diodes With p-NiO Field Limiting Rings for High P-FOM Performance - Details

author：

Indexed by：

Scopus

Abstract：

Power　devices　based　on　Ga2O3　have　been　widely　studied　in　recent　years.　Due　to　the　absence　of　the　p-Ga2O3,　the　performance　of　the　power　devices　based　on　Ga2O3　was　largely　limited.　To　get　better　performance,　many　Ga2O3　Schottky　Barrier　Diodes　(SBD)　with　edge　termination　(ET)　were　proposed.　In　this　work,　p-NiO　field　limiting　rings　(FLRs)　are　implanted　into　Ga2O3　SBD　to　improve　the　power　figure　of　merit　(P-FOM)　and　reduce　the　complexity　of　the　current　high-performance　edge　termination　structure　manufacturing　process.　The　implantation　of　the　FLRs　can　weaken　the　peak　electric　field　strength　and　extend　the　depletion　zone　in　the　horizontal　direction.　Further　exploring　the　influence　of　some　parameters　of　the　device　on　device　performance　through　TCAD　simulation,　the　breakdown　voltage　(BV)/specific　on-resistance　(Ron,sp)　of　SBD　with　FLRs　is　up　to　5340　V/3.748　mΩcm2,　and　P-FOM　=　BV2/Ron,sp　can　reach　7.61　GW/cm2,　and　turn-on　voltage　(Von)　of　0.9　V　is　achieved.　The　manufacturing　process　of　the　presented　Ga2O3　SBD　with　p-NiO　FLRs　is　relatively　simple　compared　to　devices　with　approximate　P-FOM　values.　This　kind　of　Ga2O3　SBD　with　FLRs　has　great　promise　for　future　high-power　applications.　©　2013　IEEE.

Keyword：

Field-limiting-rings Ga2O3 Hetero-junction NiO Power figure of merit

Community：

[ 1 ] [Ma H.]Fuzhou University, College of Physics and Information Engineering, Fuzhou, 350116, China
[ 2 ] [Yang D.]Fuzhou University, College of Physics and Information Engineering, Fuzhou, 350108, China
[ 3 ] [Yang D.]Fuzhou University, FZU-Jinjiang Joint Institute of Microelectronics, Jinjiang Science and Education Park, Jinjiang, 362200, China
[ 4 ] [Zhu M.]Fuzhou University, College of Physics and Information Engineering, Fuzhou, 350108, China
[ 5 ] [Zhu M.]Fuzhou University, FZU-Jinjiang Joint Institute of Microelectronics, Jinjiang Science and Education Park, Jinjiang, 362200, China
[ 6 ] [Xu X.]Fuzhou University, College of Physics and Information Engineering, Fuzhou, 350108, China
[ 7 ] [Xu X.]Fuzhou University, FZU-Jinjiang Joint Institute of Microelectronics, Jinjiang Science and Education Park, Jinjiang, 362200, China
[ 8 ] [Li T.]Fuzhou University, College of Physics and Information Engineering, Fuzhou, 350108, China
[ 9 ] [Li T.]Fuzhou University, FZU-Jinjiang Joint Institute of Microelectronics, Jinjiang Science and Education Park, Jinjiang, 362200, China
[ 10 ] [Zhang H.]Fuzhou University, College of Physics and Information Engineering, Fuzhou, 350108, China
[ 11 ] [Zhang H.]Fuzhou University, FZU-Jinjiang Joint Institute of Microelectronics, Jinjiang Science and Education Park, Jinjiang, 362200, China
[ 12 ] [Lu X.]Fuzhou University, College of Physics and Information Engineering, Fuzhou, 350116, China

Reprint 's Address：

Email：

Show more details

Related Keywords：

Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode
2025，MICRO AND NANOSTRUCTURES
Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination
2024，APPLIED PHYSICS LETTERS
Amorphous NiO as co-catalyst for enhanced visible-light-driven hydrogen generation over g-C3N4 photocatalyst
2018，APPLIED CATALYSIS B-ENVIRONMENTAL
复合终端下n-Ga2O3异质肖特基二极管的结构设计及优化
2025，功能材料与器件学报

Source ：

IEEE Journal of the Electron Devices Society

ISSN： 2168-6734

Year： 2025

2 . 0 0 0

JCR@2023

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 0

Affiliated Colleges：

Get Fulltext

DOI Library Discovery Baidu Scholar Search SCOPUS

Type
Departments

All Years Choose Year From to