2.87 kV/3.68 mΩ cm2 low forward voltage Ga2O3 vertical SBD with nitrogen-doped protecting ring and mesa termination - Details

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In　this　paper,　a　vertical　Ga2O3　Schottky　barrier　diode　(SBD)　with　nitrogen　(N)-doped　protecting　ring　and　mesa　termination　(NMT-SBD)　is　fabricated.　In　addition　to　the　electric　field　optimization　effect　of　the　mesa　termination,　the　NMT-SBD　also　features　the　N-doped　protecting　ring　to　reduce　the　electric　field　near　the　anode　edge.　This　further　increases　the　breakdown　voltage　(BV)　and　enables　the　Ni/Ga2O3　contact　with　a　low　barrier　height　to　be　used　as　the　anode,　leading　to　a　low　forward　voltage　(VF).　The　experimental　results　show　that　the　device　achieves　a　BV　of　2.87　kV　and　a　specific　on　resistance　of　3.68　mΩ　cm2,　resulting　in　a　high　power　figure　of　merit　of　2.24　GW/cm2.　Furthermore,　the　device　exhibits　a　low　VF　(@100　A/cm2)　of　1.3　V,　confirming　its　excellent　performance　with　low　conduction　loss.　This　work　demonstrates　a　promising　strategy　for　fabricating　high-power　Ga2O3　vertical　Schottky　barrier　diode.　©　2025　Author(s).

Keyword：

Anode materials Anodes Doping (additives) Electric fields Gallium compounds Nickel compounds Nitrogen

Community：

[ 1 ] [Han, Xueli]China Advanced Laser and Optoelectronic Functional Materials Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai; 201800, China
[ 2 ] [Han, Xueli]The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China
[ 3 ] [Xu, Xiaorui]The College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
[ 4 ] [Wang, Zhengbo]China Advanced Laser and Optoelectronic Functional Materials Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai; 201800, China
[ 5 ] [Wang, Zhengbo]The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China
[ 6 ] [Yang, Hanchao]The College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
[ 7 ] [Chen, Desen]The College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
[ 8 ] [Deng, Yicong]The College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
[ 9 ] [Chen, Duanyang]China Advanced Laser and Optoelectronic Functional Materials Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai; 201800, China
[ 10 ] [Zhang, Haizhong]The College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
[ 11 ] [Qi, Hongji]China Advanced Laser and Optoelectronic Functional Materials Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai; 201800, China
[ 12 ] [Qi, Hongji]The Hangzhou Institute of Optics and Fine Mechanics, Hangzhou; 311421, China

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Source ：

Applied Physics Letters

ISSN： 0003-6951

Year： 2025

Issue： 3

Volume： 127

3 . 5 0 0

JCR@2023

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 6

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