Amorphous　indium-gallium-zinc-oxide（IGZO）semiconductor　channels　were　deposited　used　pulsed　laser　deposition　technique　and　subsequently　fabricated　into　high-performance　back-gated　field-effect　transistors（FETs）employed　micro-nanofabrication　processes.　The　influence　of　deposition　temperature，oxygen　pressure，and　post-annealing　on　the　electrical　characteristics　of　IGZO　FETs　was　systematically　investigated.　The　optimal　deposition　temperature　is　identified　as　200℃.　Moreover，as　oxygen　pressure　increases，the　threshold　voltage　of　IGZO　FETs　exhibits　a　monotonic　positive　shift，reaching　a　threshold　voltage　greater　than　0　V　at　an　oxygen　pressure　of　15　Pa，transitioning　the　transistor　from　depletion-mode　to　enhancement-mode　operation.　Simultaneously，the　on/off　current　ratio　is　boosted　by　5　orders　of　magnitude，achieving　107，and　the　extracted　field-effect　mobility　is　measured　at　11.8　cm2/　（V·s）.　X-ray　photoelectron　spectroscopy（XPS）characterization　indicates　that　the　positive　threshold　voltage　shift　is　primarily　attributed　to　the　increased　oxygen　pressure，reducing　the　oxygen　vacancy　concentration（carrier　density）within　the　IGZO　thin　film.　Furthermore，to　further　optimize　the　electrical　properties　of　IGZO　FETs，annealing　at　250℃　in　an　Ar　∶O2　atmosphere　for　2　hours　is　being　performed.　This　treatment　results　in　an　enhancement　of　the　device　mobility　to　16.1　cm2/（V·s）and　a　decrease　in　the　contact　resistance　from　0.026　5　kΩ·mm　to　0.003　kΩ·mm，while　maintaining　a　consistent　threshold　voltage.　©　2025　Research　Progress　of　Solid　State　Electronics.　All　rights　reserved.