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author:

Chen, Y. (Chen, Y..) [1] | Lin, L. (Lin, L..) [2] (Scholars:林立华) | Hu, H. (Hu, H..) [3] (Scholars:胡海龙) | Li, F. (Li, F..) [4] (Scholars:李福山)

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EI Scopus

Abstract:

Inkjet printing technology of perovskite quantum dots(PQD)hold great potential in full-color display applications,but several key issues still affect their efficiency,such as unbalanced charge carrier injection,low-quality perovskite films,and non-radiative recombination pathways of PQDs themselves. To address these issues,we introduce an interface improvement layer of Phenethylammonium bromide(PEABr)to balance the charge carrier transport in devices. PEABr has a similar structure to the binary solvent of perovskite(toluene,naphthalene),which can improve the printing characteristics and film-forming ability of PQDs and effectively passivate the Br- vacancies and interface defects of PQD films. Based on this strategy,we successfully achieved inkjet-printed perovskite quantum dot light-emitting diodes(PeLEDs)with a maximum external quantum efficiency(EQE)of 8. 82% and a current efficiency(CE)of 29. 15 cd/A at a brightness of 414 cd/m2,providing beneficial insights for inkjet printing technology in future display applications. © 2024 Editorial Office of Chinese Optics. All rights reserved.

Keyword:

inkjet printing interface modification light-emitting devices perovskite quantum dots

Community:

  • [ 1 ] [Chen Y.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350106, China
  • [ 2 ] [Lin L.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350106, China
  • [ 3 ] [Hu H.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350106, China
  • [ 4 ] [Li F.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350106, China

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Source :

Chinese Journal of Luminescence

ISSN: 1000-7032

Year: 2024

Issue: 8

Volume: 45

Page: 1343-1353

Cited Count:

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ESI Highly Cited Papers on the List: 0 Unfold All

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Chinese Cited Count:

30 Days PV: 2

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