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学者姓名：林立华
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Abstract ：
High-resolution (HR) displays are in much demand as metaverse makes near-eye displays the most important equipment in recent years. Based on wave optics, a microscale optical crosstalk model for HR display devices is proposed. It is indicated that the pixel pattern will be distorted over long-distance transmission in light-emitting devices with inner periodic microstructure, and the optical distortion is related to the size of pixels and the distance from the emitting layer to the outlet. A bottom emissive HR red quantum dot light-emitting diode (QLED) array is introduced to confirm the model and a top emission scheme is provided to effectively reduce the transmission distance and suppress the pixel distortion. Optical-crosstalk-free pixels are finally achieved by adopting the optimized top-emission cathode thickness of 30 nm. This study provides a direction for realizing high-quality and high-resolution micro-displays. The optical distortion is related to the size of pixels and the distance from the emitting layer to the outlet. A top emission scheme is provided to effectively reduce the transmission distance and suppress the pixel distortion. Optical-crosstalk-free pixels are achieved by adopting the optimized top emission cathode thickness of 30 nm. image
Keyword ：
display distortion display distortion high-resolution high-resolution optical crosstalk optical crosstalk QLED QLED
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| GB/T 7714 | Zheng, Yueting , Lin, Lihua , Hu, Hailong et al. Optical Crosstalk Suppression in High-Resolution Quantum Dot Light-Emitting Devices [J]. | ADVANCED OPTICAL MATERIALS , 2024 , 12 (15) . |
| MLA | Zheng, Yueting et al. "Optical Crosstalk Suppression in High-Resolution Quantum Dot Light-Emitting Devices" . | ADVANCED OPTICAL MATERIALS 12 . 15 (2024) . |
| APA | Zheng, Yueting , Lin, Lihua , Hu, Hailong , Guo, Tailiang , Li, Fushan . Optical Crosstalk Suppression in High-Resolution Quantum Dot Light-Emitting Devices . | ADVANCED OPTICAL MATERIALS , 2024 , 12 (15) . |
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With pixel miniaturization, the performance of high-resolution quantum dot light-emitting diodes (QLEDs) usually degrades. Considering the dimension of ultrasmall pixels, herein, a barrier architecture based on localized surface plasmon resonance (LSPR) that promotes the radiative recombination of neighboring quantum dots is rationally designed to improve the device performance. Au nanoparticles (NPs) are embedded in an insulating polymer to form a honeycomb-patterned barrier layer via the nanoimprint process. Each pixel fabricated in the void area (average diameter of 1.5 mu m) of the barrier layer is surrounded by a number of LSPR-NPs to enhance the luminescence. The resultant green QLEDs with a resolution of 9027 pixels per inch show a maximum external quantum efficiency of 11.1%, a 42.8% enhancement compared to the control device. Additionally, the lifetime of high-resolution QLEDs is obviously improved by the LSPR effect.
Keyword ：
Au nanoparticles Au nanoparticles high-resolution high-resolution light-emitting diodes light-emitting diodes localized surfaceplasmon resonance localized surfaceplasmon resonance quantum dot quantum dot
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| GB/T 7714 | Zhang, Xu , Hu, Hailong , Qie, Yuan et al. Boosting the Efficiency of High-Resolution Quantum Dot Light-Emitting Devices Based on Localized Surface Plasmon Resonance [J]. | ACS APPLIED MATERIALS & INTERFACES , 2024 , 16 (10) : 13219-13224 . |
| MLA | Zhang, Xu et al. "Boosting the Efficiency of High-Resolution Quantum Dot Light-Emitting Devices Based on Localized Surface Plasmon Resonance" . | ACS APPLIED MATERIALS & INTERFACES 16 . 10 (2024) : 13219-13224 . |
| APA | Zhang, Xu , Hu, Hailong , Qie, Yuan , Lin, Lihua , Guo, Tailiang , Li, Fushan . Boosting the Efficiency of High-Resolution Quantum Dot Light-Emitting Devices Based on Localized Surface Plasmon Resonance . | ACS APPLIED MATERIALS & INTERFACES , 2024 , 16 (10) , 13219-13224 . |
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Abstract ：
钙钛矿量子点(PQD)的喷墨打印技术在全彩显示应用中具有巨大潜力,但一些关键问题仍然影响其发光效率,例如不平衡的载流子注入、低质量的钙钛矿薄膜以及PQD自身的非辐射复合通道等.为解决这些问题,我们引入了界面修饰层苯乙基溴化铵(PEABr)以平衡器件的载流子传输.PEABr与钙钛矿二元溶剂(甲苯、萘)具有相似的结构,可改善PQD的印刷特性和成膜能力,并有效钝化PQD膜的Br-空位和界面缺陷.基于这一策略,成功实现了在414 cd/m²亮度下,最大外量子效率(EQE)达到8.82％、电流效率(CE)达到29.15 cd/A的喷墨打印钙钛矿量子点发光二极管(PeLED),为喷墨打印技术在未来显示领域中的应用提供了有益的思路.
Keyword ：
喷墨打印 喷墨打印 电致发光器件 电致发光器件 界面修饰 界面修饰 钙钛矿量子点 钙钛矿量子点
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| GB/T 7714 | 陈逸群 , 林立华 , 胡海龙 et al. 基于多功能苯乙基溴化铵修饰层的喷墨打印钙钛矿量子点发光二极管 [J]. | 发光学报 , 2024 , 45 (8) : 1343-1353 . |
| MLA | 陈逸群 et al. "基于多功能苯乙基溴化铵修饰层的喷墨打印钙钛矿量子点发光二极管" . | 发光学报 45 . 8 (2024) : 1343-1353 . |
| APA | 陈逸群 , 林立华 , 胡海龙 , 李福山 . 基于多功能苯乙基溴化铵修饰层的喷墨打印钙钛矿量子点发光二极管 . | 发光学报 , 2024 , 45 (8) , 1343-1353 . |
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Abstract ：
Quantum dot light-emitting diodes (QLEDs) are emerging as promising candidates for next-generation displays, with the current efficiency and stability of both red and green QLEDs meeting display requirements. However, the efficiency and stability of blue QLEDs, particularly pure blue iterations, significantly lag behind those of their red and green counterparts, thus hindering the widespread adoption of full-color QLEDs. Here, we introduce a strategy to improve the efficiency and stability of pure blue zinc selenide (ZnSe) QLEDs by adding a new ionic liquid (IL) salt, 1-butyl-3-methylimidazolium phosphorus hexafluoride (BMIMPF6), into the hole transport layer (HTL). This IL salt acts as an effective p-dopant, enhancing charge mobility while also increasing the surface potentials of the HTL for better alignment of energy bands at the interface. This results in a significant improvement in device performance, with the external quantum efficiency (EQE) increasing from 4.90% to 7.02%, setting a high performance for cadmium-free pure-blue ZnSe QLEDs. Additionally, the device's operational lifetime, measured as the time taken for luminance to drop to 50% (T-50) at 100 cd m(-2), sees a remarkable six-fold increase, reaching 177 hours. Our work represents a significant advancement in developing cadmium-free pure-blue ZnSe QLEDs and offers valuable insights for designing efficient and stable quantum dot-based displays.
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| GB/T 7714 | Lin, Lihua , Ye, Xiaoxue , Luo, Zhiqi et al. Enhancing the efficiency and stability of ZnSe pure blue quantum dot light-emitting diodes via ionic liquid doping [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 12 (28) : 10408-10416 . |
| MLA | Lin, Lihua et al. "Enhancing the efficiency and stability of ZnSe pure blue quantum dot light-emitting diodes via ionic liquid doping" . | JOURNAL OF MATERIALS CHEMISTRY C 12 . 28 (2024) : 10408-10416 . |
| APA | Lin, Lihua , Ye, Xiaoxue , Luo, Zhiqi , Chen, Weiguo , Guo, Tailiang , Hu, Hailong et al. Enhancing the efficiency and stability of ZnSe pure blue quantum dot light-emitting diodes via ionic liquid doping . | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 12 (28) , 10408-10416 . |
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Photosensitive quantum dot light-emitting diodes (PSQLEDs) possess the dual capabilities of generating and detecting light signals, which is of significant importance for the development of miniaturized and integrated optoelectronic devices. However, the state-of-the-art PSQLEDs can only detect light signals within a certain wavelength range, and require switching between the two functions under different bias voltage directions. In this work, The use of a ZnO/quantum dots (QDs)/ZnO multilayer (ZQZ ML) architecture as both the electron transport layer and the photosensitive layer is pioneered. The QDs in this structure are composed of narrow-bandgap lead sulfide QDs and wide-bandgap cadmium selenide QDs, successfully realizing a unique PSQLED device with C photosensitive characteristics. As a result, the as-fabricated device can respond to illumination from 365 to 1300 nm, and the device achieves a photoresponse rate of 20.9 mA W-1 in self-powered mode to UV light. After UV light irradiation, the maximum external quantum efficiency and maximum luminance of device reached 11.8% and 64,549 cd m-2, respectively. The device shows a record-high luminance ON/OFF ratio of 5500%, which is beneficial for high contrast and accurate information display. A quantum dot light-emitting diode (QLED) is developed with UV-vis-NIR photosensitive characteristics based on a ZnO/QDs/ZnO multilayer structure. This device can respond to UV to NIR signals in self-powered mode. Additionally, after UV light irradiation, the device achieves a maximum external quantum efficiency of 11.8% and a luminance of 64,549 cd m-2, with a record-high luminance ON/OFF ratio of 5500%. image
Keyword ：
broad-spectrum detection broad-spectrum detection dual-functional dual-functional light-emitting device light-emitting device photosensitive photosensitive quantum dot quantum dot
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| GB/T 7714 | Pan, Youjiang , Hu, Hailong , Yang, Kaiyu et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity [J]. | ADVANCED OPTICAL MATERIALS , 2024 , 12 (26) . |
| MLA | Pan, Youjiang et al. "Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity" . | ADVANCED OPTICAL MATERIALS 12 . 26 (2024) . |
| APA | Pan, Youjiang , Hu, Hailong , Yang, Kaiyu , Chen, Wei , Lin, Lihua , Guo, Tailiang et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity . | ADVANCED OPTICAL MATERIALS , 2024 , 12 (26) . |
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In the rapidly evolving Metaverse, enhancing user immersion through clear, lifelike, and ergonomic near-eye displays is crucial. However, existing rigid near-eye displays encounter challenges such as insufficient resolution, limited adaptability, and suboptimal visual experiences. To address these issues, a strategic shift is proposed to flexible ultrahigh-resolution (FUR) displays, which combine ultrahigh resolution with the ability to conform to individual eye curvature for a more realistic field of view. FUR quantum dot light-emitting diodes (FUR-QLEDs) featuring 9072 pixels per inch (PPI), a maximum external quantum efficiency (EQE) of 15.7%, and peak brightness of 15 163 cd m-2 are achieved through the integration of nanoimprinting and surface modification technologies. The degradation mechanism of FUR-QLEDs under bending fatigue tests is investigated, identifying the high elastic modulus of the insulating patterned film as the primary cause through theoretical analysis, simulation, and experimental characterizations. Optimizing the elastic modulus of the patterned film enabled to maintain 91% of its initial brightness after 400 bending cycles, demonstrating exceptional bending stability and durability of FUR-QLEDs. Describing the advancement of flexible ultrahigh-resolution-quantum dot light-emitting diodes and their integration with nanoimprinting and surface modification technologies aimed at mitigating the limitations of contemporary near-eye display technologies in virtual reality and augmented reality immersion within the dynamic context of the Metaverse, thereby augmenting user experiences. image
Keyword ：
bending stability bending stability durability durability flexible flexible high performance high performance high-resolution high-resolution QLEDs QLEDs
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| GB/T 7714 | Lin, Lihua , Dong, Zhihua , Wang, Jie et al. Flexible Ultrahigh-Resolution Quantum-Dot Light-Emitting Diodes [J]. | ADVANCED FUNCTIONAL MATERIALS , 2024 , 34 (48) . |
| MLA | Lin, Lihua et al. "Flexible Ultrahigh-Resolution Quantum-Dot Light-Emitting Diodes" . | ADVANCED FUNCTIONAL MATERIALS 34 . 48 (2024) . |
| APA | Lin, Lihua , Dong, Zhihua , Wang, Jie , Hu, Hailong , Chen, Weiguo , Guo, Tailiang et al. Flexible Ultrahigh-Resolution Quantum-Dot Light-Emitting Diodes . | ADVANCED FUNCTIONAL MATERIALS , 2024 , 34 (48) . |
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Abstract ：
采用封装胶/密封脂/封口膜的三重封装策略,柔性超高分辨量子点发光二极管(FUQLED)达到IPX7级防水标准.该FUQLED具备9 072 ppi的分辨率和10.8%的外量子效率(EQE),以及卓越的防水性能.在水下的工作寿命(LT50)超过 60 min,即使在 36 h的水下浸泡后,亮度依然保持在5 000 cd/m2以上.这一防水架构为高信息密度的可穿戴医疗监测系统提供了极具前景的解决方案.
Keyword ：
封装 封装 纳米压印 纳米压印 量子点发光二极管 量子点发光二极管 防水 防水
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| GB/T 7714 | 董志华 , 林立华 , 郭太良 et al. IPX7级防水柔性超高分辨量子点发光二极管 [J]. | 光电子技术 , 2024 , 44 (4) : 282-288 . |
| MLA | 董志华 et al. "IPX7级防水柔性超高分辨量子点发光二极管" . | 光电子技术 44 . 4 (2024) : 282-288 . |
| APA | 董志华 , 林立华 , 郭太良 , 李福山 . IPX7级防水柔性超高分辨量子点发光二极管 . | 光电子技术 , 2024 , 44 (4) , 282-288 . |
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