GaN　materials　have　attracted　great　interest　and　have　demonstrated　remarkable　potential　in　many　fields.　When　growing　GaN　materials,　substrate　selection　is　of　great　importance.　By　virtue　of　their　nominally　unlimited　size,　easy　removal,　and　excellent　thermal　conduction,　metal　substrates　have　been　suggested　as　an　alternative　to　the　commonly　used　substrates　such　as　sapphire.　GaN　growth　on　metal　substrates,　however,　is　still　quite　rare,　and　many　aspects　remain　unexplored.　This　paper　uses　computational　fluid　dynamics　to　perform　a　three-dimensional　numerical　simulation　of　the　GaNMOCVD　reaction　chamber.　We　investigated　the　influence　of　the　graphite　containers＇　rotational　velocity　and　the　metal　matrix＇s　temperature　at　various　locations.　When　the　pressure　within　the　MOCVD　chamber　remains　constant,　increasing　the　graphite　tray＇s　rotational　velocity　enhances　the　temperature　field　distribution　within　the　chamber.　However,　the　flow　field　becomes　unstable　when　the　rotation　rate　exceeds　1000　rpm.　Our　findings　serve　as　a　crucial　benchmark　for　the　future　parameter　optimization　of　MOCVD　growth　of　GaN　on　metals.　©　2024　John　Wiley　and　Sons　Inc.　All　rights　reserved.