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author:

Li, Enlong (Li, Enlong.) [1] | Wang, Xiumei (Wang, Xiumei.) [2] | Yu, Xipeng (Yu, Xipeng.) [3] | Yu, Rengjian (Yu, Rengjian.) [4] | Li, Wenwu (Li, Wenwu.) [5] | Guo, Tailiang (Guo, Tailiang.) [6] (Scholars:郭太良) | Chu, Junhao (Chu, Junhao.) [7] | Chen, Huipeng (Chen, Huipeng.) [8] (Scholars:陈惠鹏)

Indexed by:

EI Scopus SCIE

Abstract:

Efficient in-sensor computing necessitates linear, bidirectional, and centrosymmetric photoresponse weight updates; however, the realization of these attributes poses a persistent challenge, with most photosensor devices achieving linear analog weight updates while falling short of accomplishing bidirectional and centrosymmetric characteristics. Here, the development of a quantum dot (QD)-based bulk heterojunction synaptic transistor (QBST) with multi-factor modulation through surface ligand engineering of blend QDs is reported. By controlling the charge transmission between QDs and the semiconductor, the QBST device enables tunable fading memory, which transforms linear weight updates in short-chain devices into linear, bidirectional, and unprecedented centrosymmetric optical synaptic responses in long-chain devices. Moreover, through the synergy of chemical and electric factors, the convolutional kernel of QBSTs-based convolutional neural network realizes enhanced recognition for complex noisy fashion-costume images, achieving an impressive 90.3% accuracy in the long-chain device, highlighting the efficiency of centrosymmetric weight updates. The results demonstrate that surface ligand engineering offers a promising approach for customizable synaptic modulation, facilitating energy- and time-efficient in-sensor computing. By modulating the ligand chain length of perovskite QDs, bulk heterojunction synaptic transistors can achieve multi-factor optical synaptic modulation, enabling tunable fading memory. Notably, the optical synaptic weight transforms linear weight updates in short-chain devices into linear, bidirectional, and unprecedented centrosymmetric optical synaptic responses in long-chain devices, showcasing their tremendous potential in high-accuracy in-sensor computing applications. image

Keyword:

bulk heterojunction in-sensor computing multi-factor modulation organic synaptic transistor quantum dot ligand engineering

Community:

  • [ 1 ] [Li, Enlong]Fudan Univ, Inst Optoelect, Dept Mat Sci, Shanghai Frontiers Sci Res Base Intelligent Optoel, Shanghai 200433, Peoples R China
  • [ 2 ] [Li, Wenwu]Fudan Univ, Inst Optoelect, Dept Mat Sci, Shanghai Frontiers Sci Res Base Intelligent Optoel, Shanghai 200433, Peoples R China
  • [ 3 ] [Chu, Junhao]Fudan Univ, Inst Optoelect, Dept Mat Sci, Shanghai Frontiers Sci Res Base Intelligent Optoel, Shanghai 200433, Peoples R China
  • [ 4 ] [Li, Enlong]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350002, Peoples R China
  • [ 5 ] [Wang, Xiumei]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350002, Peoples R China
  • [ 6 ] [Yu, Xipeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350002, Peoples R China
  • [ 7 ] [Yu, Rengjian]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350002, Peoples R China
  • [ 8 ] [Guo, Tailiang]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350002, Peoples R China
  • [ 9 ] [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350002, Peoples R China
  • [ 10 ] [Li, Enlong]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 11 ] [Wang, Xiumei]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 12 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 13 ] [Chen, Huipeng]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 14 ] [Wang, Xiumei]Anhui Agr Univ, Sch Engn, Hefei 230036, Anhui, Peoples R China

Reprint 's Address:

  • 陈惠鹏

    [Li, Wenwu]Fudan Univ, Inst Optoelect, Dept Mat Sci, Shanghai Frontiers Sci Res Base Intelligent Optoel, Shanghai 200433, Peoples R China;;[Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350002, Peoples R China;;[Chen, Huipeng]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China

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Source :

ADVANCED FUNCTIONAL MATERIALS

ISSN: 1616-301X

Year: 2024

Issue: 26

Volume: 34

1 8 . 5 0 0

JCR@2023

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 2

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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