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author:

Chen, Xiang (Chen, Xiang.) [1] | Li, Enlong (Li, Enlong.) [2] | Zhang, Xianghong (Zhang, Xianghong.) [3] | Chen, Qizhen (Chen, Qizhen.) [4] | Yu, Rengjian (Yu, Rengjian.) [5] | Ye, Yun (Ye, Yun.) [6] (Scholars:叶芸) | Chen, Huipeng (Chen, Huipeng.) [7] (Scholars:陈惠鹏) | Guo, Tailiang (Guo, Tailiang.) [8] (Scholars:郭太良)

Indexed by:

EI SCIE

Abstract:

Artificial synaptic devices have been developed to simulate biological synapses, while the connections in different synapses are different in strength, which is usually ignored in current research of artificial synapses. Here, we develop organic synaptic transistor array in a single wafer using inkjet-printing to simulate synaptic behavior with one presynaptic membrane and multiple postsynaptic membranes. By regulating droplet spacing during inkjet-printing, synaptic array with varying synaptic behavior can be achieved. This new type of synaptic transistor array enriches the diversity of neuromorphic devices and provides a new direction for the construction of next-generation neural networks.

Keyword:

Biomembranes Electron traps Films Inkjet-printing Logic gates multiple postsynaptic membranes Object recognition organic transistor Synapses synaptic transistor array Transistors

Community:

  • [ 1 ] [Chen, Xiang]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 2 ] [Li, Enlong]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 3 ] [Zhang, Xianghong]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 4 ] [Chen, Qizhen]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 5 ] [Yu, Rengjian]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 6 ] [Ye, Yun]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 7 ] [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 8 ] [Guo, Tailiang]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 9 ] [Chen, Xiang]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 10 ] [Li, Enlong]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 11 ] [Zhang, Xianghong]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 12 ] [Chen, Qizhen]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 13 ] [Yu, Rengjian]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 14 ] [Ye, Yun]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 15 ] [Chen, Huipeng]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 16 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China

Reprint 's Address:

  • 陈惠鹏

    [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China

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Source :

IEEE ELECTRON DEVICE LETTERS

ISSN: 0741-3106

Year: 2022

Issue: 3

Volume: 43

Page: 394-397

4 . 9

JCR@2022

4 . 1 0 0

JCR@2023

ESI Discipline: ENGINEERING;

ESI HC Threshold:66

JCR Journal Grade:2

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 8

SCOPUS Cited Count: 8

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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