Enhanced Electrical Performance of Ge nMOSFET with Rapid Remote Plasma Oxidation Treatment - Details

author：

Liu, Jia-Cheng (Liu, Jia-Cheng.) ^[1] | Ruan, Dun-Bao (Ruan, Dun-Bao.) ^[2] | Chang-Liao, Kuei-Shu (Chang-Liao, Kuei-Shu.) ^[3] | Liu, Guan-Ting (Liu, Guan-Ting.) ^[4]

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Abstract：

A　rapid　remote　plasma　oxidation　(RRPO)　treatment　was　applied　on　the　alloy-like　oxygen-adsorbing　hafnium　nitride　interfacial　layer　in　Ge　nMOSFET　device.　The　sample　with　a　RRPO　treatment　for　10　s　exhibits　lower　EOT,　JG,DIT　,　S.S.　values,　narrower　frequency　dispersion,　higher　ION/IOFF,ION　and　Gm　values,　due　to　the　reduction　of　border　trap　and　oxygen　vacancy.　©　2023　JSAP.

Keyword：

Germanium Hafnium compounds MOSFET devices Oxygen vacancies

Community：

[ 1 ] [Liu, Jia-Cheng]National Tsing Hua University, Department of Engineering and System Science, Taiwan
[ 2 ] [Ruan, Dun-Bao]College of Physics and Information Engineering, Fuzhou University, China
[ 3 ] [Chang-Liao, Kuei-Shu]National Tsing Hua University, Department of Engineering and System Science, Taiwan
[ 4 ] [Liu, Guan-Ting]National Tsing Hua University, Department of Engineering and System Science, Taiwan

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Enhanced Electrical Performance of Ge nMOSFET with Rapid Remote Plasma Oxidation Treatment
2023，2023 Silicon Nanoelectronics Workshop, SNW 2023

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Year： 2023

Page： 73-74

Language： English

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