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Abstract：
A rapid remote plasma oxidation (RRPO) treatment was applied on the alloy-like oxygen-adsorbing hafnium nitride interfacial layer in Ge nMOSFET device. The sample with a RRPO treatment for 10 s exhibits lower EOT, JG,DIT , S.S. values, narrower frequency dispersion, higher ION/IOFF,ION and Gm values, due to the reduction of border trap and oxygen vacancy. © 2023 JSAP.
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Year： 2023
Page： 73-74
Language： English
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WoS CC Cited Count： 0
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ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 1
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