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Abstract:
A high performance Ge FinFET CMOS invertor with ION=2mA/ m at VOV =1V,S.S.=64mV/dec,ION/IOFF=2.5 106 , and voltage gain=90 V/V is achieved by a high pressure supercritical fluid hydroxide oxidation, due to the reduced unstable oxidation states and oxygen vacancy. © 2023 JSAP.
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Year: 2023
Page: 23-24
Language: English
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