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author:

Lin, Qinghong (Lin, Qinghong.) [1] | Zhu, Yangbin (Zhu, Yangbin.) [2] | Wang, Yue (Wang, Yue.) [3] | Li, Deli (Li, Deli.) [4] | Zhao, Yi (Zhao, Yi.) [5] | Liu, Yang (Liu, Yang.) [6] | Li, Fushan (Li, Fushan.) [7] | Huang, Wei (Huang, Wei.) [8]

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EI

Abstract:

Quantum dot light-emitting diodes (QLEDs), owing to their exceptional performances in device efficiency, color purity/tunability in the visible region and solution-processing ability on various substrates, become a potential candidate for flexible and ultrathin electroluminescent (EL) lighting and display. Moreover, beyond the lighting and display, flexible QLEDs are enabled with endless possibilities in the era of the internet of things and artificial intelligence by acting as input/output ports in wearable integrated systems. Challenges remain in the development of flexible QLEDs with the goals for high performance, excellent flexibility/even stretchability, and emerging applications. In this paper, the recent developments of QLEDs including quantum dot materials, working mechanism, flexible/stretchable strategies and patterning strategies, and highlight its emerging multifunctional integrations and smart applications covering wearable optical medical devices, pressure-sensing EL devices, and neural smart EL devices, are reviewed. The remaining challenges are also summarized and an outlook on the future development of flexible QLEDs made. The review is expected to offer a systematic understanding and valuable inspiration for flexible QLEDs to simultaneously satisfy optoelectronic and flexible properties for emerging applications. © 2023 Wiley-VCH GmbH.

Keyword:

Current density Electroluminescence Flexible displays Luminescent devices Nanocrystals Organic light emitting diodes (OLED) Semiconductor quantum dots Wearable technology

Community:

  • [ 1 ] [Lin, Qinghong]Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fujian, Fuzhou; 350117, China
  • [ 2 ] [Lin, Qinghong]Strait Laboratory of Flexible Electronics (SLoFE), Fujian, Fuzhou; 350117, China
  • [ 3 ] [Zhu, Yangbin]School of Intelligent Manufacturing and Electronic Engineering, Wenzhou University of Technology, Wenzhou; 325035, China
  • [ 4 ] [Wang, Yue]Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fujian, Fuzhou; 350117, China
  • [ 5 ] [Wang, Yue]Strait Laboratory of Flexible Electronics (SLoFE), Fujian, Fuzhou; 350117, China
  • [ 6 ] [Li, Deli]Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fujian, Fuzhou; 350117, China
  • [ 7 ] [Li, Deli]Strait Laboratory of Flexible Electronics (SLoFE), Fujian, Fuzhou; 350117, China
  • [ 8 ] [Zhao, Yi]Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fujian, Fuzhou; 350117, China
  • [ 9 ] [Zhao, Yi]Strait Laboratory of Flexible Electronics (SLoFE), Fujian, Fuzhou; 350117, China
  • [ 10 ] [Liu, Yang]Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fujian, Fuzhou; 350117, China
  • [ 11 ] [Liu, Yang]Strait Laboratory of Flexible Electronics (SLoFE), Fujian, Fuzhou; 350117, China
  • [ 12 ] [Li, Fushan]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 13 ] [Huang, Wei]Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fujian, Fuzhou; 350117, China
  • [ 14 ] [Huang, Wei]Strait Laboratory of Flexible Electronics (SLoFE), Fujian, Fuzhou; 350117, China
  • [ 15 ] [Huang, Wei]Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an; 710072, China
  • [ 16 ] [Huang, Wei]Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing; 211816, China

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Source :

Advanced Materials

ISSN: 0935-9648

Year: 2023

Issue: 32

Volume: 35

2 7 . 4

JCR@2023

2 7 . 4 0 0

JCR@2023

ESI HC Threshold:49

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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