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author:

Zheng, J. (Zheng, J..) [1] | Yang, K. (Yang, K..) [2] (Scholars:杨开宇) | Li, F. (Li, F..) [3] (Scholars:李福山)

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Abstract:

Metal halide perovskite quantum dots have the potential to become the next generation of luminescent display material because of their excellent optical properties such as high photoluminescence quantum yield, high color purity and adjustable band gap. At present, the electroluminescence efficiency of red-green perovskite quantum dot light-emitting diode (PQLED) has reached the level of organic light-emitting diodes (OLED). However, organic long-chain ligands hinder charge transport, resulting in a lower brightness of perovskite quantum dot light-emitting diodes at maximum external quantum efficiency (EQE). In order to realize that the perovskite QDs still have high luminescence brightness at the maximum EQE, we replaced the organic long-chain ligand with the inorganic ligand CaBr2, strengthened the carrier transmission in PQLED, and enhanced the electroluminescent carrier injection. Compared with organic long-chain ligand and organic short-chain ligand, inorganic ligand can slow down the electrical insulation caused by the existence of organic chains, improve the conductance of QDs, and further enhance the luminescence characteristics of QDs. Based on this strategy, we achieved perovskite quantum dot light-emitting diodes with a peak EQE of 10.57% at a high brightness of 3 753 cd/m2. At an operating voltage of 6.6 V, the maximum brightness of the PQLED is 116 612 cd/m2 © 2023 Chines Academy of Sciences. All rights reserved.

Keyword:

CaBr2 carrier transport high brightness perovskite

Community:

  • [ 1 ] [Zheng J.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 2 ] [Yang K.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 3 ] [Li F.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China

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Source :

Chinese Journal of Luminescence

ISSN: 1000-7032

CN: 22-1116/O4

Year: 2023

Issue: 6

Volume: 44

Page: 933-941

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 5

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