High-performance light-emitting devices with hole injection layer based on in situ doping for immersive near-eye display - Details

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Abstract：

Near-eye　displays　(NEDs)　with　the　ability　to　sense　environmental　optical　information　are　crucial　for　immersive　human-environment-interactive　technologies,　which　require　a　device　brightness　of　more　than　25,000　cd/m2.　Quantum　dot　light-emitting　diodes　(QLEDs)　are　a　promising　candidate　for　such　high-bright　NEDs.　However,　the　efficiency　roll-off　behavior　at　high　brightness　severely　limits　their　application.　Here,　we　report　a　universal　hole-injection-enhanced　strategy　to　boost　the　external　quantum　efficiency　(EQE)　of　QLEDs　to　19.4%　at　an　ultra-high　brightness　of　40,158　cd/m2.　The　device　consistently　maintains　an　efficiency　of　more　than　17%　over　a　considerably　high　brightness　range　(3,461–118,327　cd/m2).　These　major　advances　are　due　to　enhanced　hole　injection　by　using　Sn-doped　inorganic　phosphomolybdate　(Sn:PMA)　material　as　the　hole　injection　layer.　The　strategy　is　demonstrated　to　be　widely　suitable　for　various　NED　devices,　such　as　organic　LEDs　(OLEDs)　and　perovskite　LEDs　(Pe-LEDs).　©　2024　The　Author(s)

Keyword：

hole injection layer light-emitting diodes near-to-eye display quantum dot ultra-high brightness

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[ 1 ] [Zhu Y.]School of Intelligent Manufacturing and Electronic Engineering, Wenzhou University of Technology, Wenzhou, 325035, China
[ 2 ] [Liu Y.]Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Key Laboratory of Flexible Electronics, Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, 350007, China
[ 3 ] [Ye Y.]School of Intelligent Manufacturing and Electronic Engineering, Wenzhou University of Technology, Wenzhou, 325035, China
[ 4 ] [Liu G.]College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300071, China
[ 5 ] [Hu H.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
[ 6 ] [Hu H.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350116, China
[ 7 ] [Guo T.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
[ 8 ] [Guo T.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350116, China
[ 9 ] [Li F.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
[ 10 ] [Li F.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350116, China

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Source ：

Cell Reports Physical Science

ISSN： 2666-3864

Year： 2024

Issue： 11

Volume： 5

7 . 9 0 0

JCR@2023

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 2

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