A　Bandgap　reference　(BGR)　circuit　with　a　new　high-order　curvature-compensation　technique　is　proposed　in　this　paper.　The　curvature　method　operates　by　adding　up　two　correction　voltages.　The　first　one　is　proportional　to　the　difference　in　gate-source　voltages　of　two　MOS　transistors　(Δ　VGS)　operating　in　weak　inversion　mode,　while　the　second　one　(VNL)　is　generated　using　a　nonlinear　current　created　by　a　piecewise-linear　circuit.　To　improve　the　power　supply　rejection　ratio　(PSRR)　and　the　line　regulation　performance,　a　low-power　pre-regulator　isolates　the　circuit　power　supply　and　BGR　output.　Additionally,　the　chopping　technique　reduces　the　output　voltage　noise　and　offset.　Consequently,　the　overall　PVT　robustness　of　the　proposed　circuit　is　significantly　improved.　The　circuit　was　implemented　using　a　thick-oxide　transistor　in　a　standard　0.18　μ　m　CMOS　technology　with　a　3.3　V　power　supply　voltage.　The　silicon　results　exhibit　a　temperature　coefficient　of　5-15　ppm/°C　in　the　temperature　range　of　-10　°C　to　110　°C,　whereas　the　simulated　results　demonstrate　a　similar　performance　within　the　temperature　range　of　-40　°C　to　150　°C.　The　supply　current　consumption　is　150　μl　A　,　and　the　chip　area　is　0.56×0.8　mm2.　The　measured　peak　noise　at　the　output　is　1.42　μ　V　Hz　@320　Hz,　the　measured　PSRR　@　1　kHz　is　-80　dB,　and　the　line　regulation　performance　is　10　ppm/V,　making　the　proposed　circuit　suitable　for　applications　requiring　low　noise,　high-order　temperature　compensation,　and　robust　PVT　performance.　©　2013　IEEE.