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author:

Wei, Rongshan (Wei, Rongshan.) [1] (Scholars:魏榕山) | Guo, Shizhong (Guo, Shizhong.) [2] | Yang, Shanzhi (Yang, Shanzhi.) [3]

Indexed by:

EI Scopus

Abstract:

This paper presents an integrated Hall switch sensor based on SMIC 0.18 μm CMOS technology. The system includes a front-end Hall element and a back-end signal processing circuit. By optimizing the structure of the Hall element and using the orthogonal coupling and spinning current technology, the offset voltage can be suppressed effectively. The simulation results showed that the Hall switch can eliminate offset voltage greater than 1 mV at 3.3 V supply voltage. Two modes of the Hall switch circuit, the awake mode and the sleep mode, were realized by using clock logic signals without compromising the performance of the Hall switch, thereby reducing power consumption. The test results showed that the operate point and the release point of the switch were within the range of 3-7 mT at 3.3 V supply voltage. Meanwhile, the current consumption is 7.89 μA. © 2017 Rongshan Wei et al.

Keyword:

CMOS integrated circuits Hall effect devices Signal processing

Community:

  • [ 1 ] [Wei, Rongshan]College of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian, China
  • [ 2 ] [Guo, Shizhong]College of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian, China
  • [ 3 ] [Yang, Shanzhi]College of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian, China

Reprint 's Address:

  • 魏榕山

    [wei, rongshan]college of physics and information engineering, fuzhou university, fuzhou, fujian, china

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Source :

Active and Passive Electronic Components

ISSN: 0882-7516

Year: 2017

Volume: 2017

1 . 3 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 3

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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