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author:

Mo, Shaoqing (Mo, Shaoqing.) [1] | Wei, Rongshan (Wei, Rongshan.) [2] (Scholars:魏榕山) | Zeng, Zhuoqu (Zeng, Zhuoqu.) [3] | He, Minghua (He, Minghua.) [4]

Indexed by:

EI SCIE

Abstract:

An integrated Hall sensor with a 100-kHz signal-sensing bandwidth suitable for current measurements is proposed in this paper. By combining feedback technology and the bandgap compensation principle, the temperature drift of the proposed Hall sensor is compensated. A 0.095%/degrees C temperature drift can be achieved over a temperature ranging from -40 degrees C to +125 degrees C. The proposed Hall sensor is implemented using 180-nm CMOS technology. The overall chip size is 3 mm2, with a total current consumption of 7 mA at a 3.3-V supply voltage. Experimental chip measurements demonstrate that the proposed Hall sensor is capable of achieving an equivalent magnetic-field noise density of 114 nT= ffiffiffiffiffi

Keyword:

Hall sensor Low-cost Low-linearity error Low noise Temperature compensation

Community:

  • [ 1 ] [Mo, Shaoqing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Peoples R China
  • [ 2 ] [Wei, Rongshan]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Peoples R China
  • [ 3 ] [Zeng, Zhuoqu]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Peoples R China
  • [ 4 ] [He, Minghua]Fujian Med Univ, Fuzhou 350122, Peoples R China

Reprint 's Address:

  • 魏榕山

    [Wei, Rongshan]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Peoples R China

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Source :

MICROELECTRONICS JOURNAL

ISSN: 0026-2692

Year: 2021

Volume: 113

1 . 9 9 2

JCR@2021

1 . 9 0 0

JCR@2023

ESI Discipline: ENGINEERING;

ESI HC Threshold:105

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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