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Abstract:
An integrated Hall sensor with a 100-kHz signal-sensing bandwidth suitable for current measurements is proposed in this paper. By combining feedback technology and the bandgap compensation principle, the temperature drift of the proposed Hall sensor is compensated. Α 0.095%/°C temperature drift can be achieved over a temperature ranging from −40 °C to +125 °C. The proposed Hall sensor is implemented using 180-nm CMOS technology. The overall chip size is 3 mm2, with a total current consumption of 7 mA at a 3.3-V supply voltage. Experimental chip measurements demonstrate that the proposed Hall sensor is capable of achieving an equivalent magnetic-field noise density of 114 nT/Hz and a linearity error of 1.5%. © 2021 Elsevier Ltd
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Source :
Microelectronics Journal
ISSN: 0026-2692
Year: 2021
Volume: 113
1 . 9 9 2
JCR@2021
1 . 9 0 0
JCR@2023
ESI HC Threshold:105
JCR Journal Grade:3
CAS Journal Grade:4
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SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
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30 Days PV: 1
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