Investigation of DIBL Degradation in Nanoscale FinFETs under Various Hot Carrier Stresses - Details

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Abstract：

In　this　paper,　the　degradation　of　drain-induced　barrier　lowering　(DIBL)　in　FinFETs　is　experimentally　studied　under　various　hot　carrier　degradation　(HCD)　stress　conditions.　A　test　method　is　developed　to　characterize　channel　barrier　height　modulation　under　different　HCD　stress　conditions.　A　linear　relationship　of　ΔVthlin　and　ΔVthsat　after　HCD　is　found.　Then　a　compact　model　of　HCD-induced　ΔDIBL　is　proposed.　The　results　are　helpful　for　the　physical　understanding　and　modeling　of　HCD　in　nanoscale　FinFETs　and　aging-aware　circuit　design.　©　2018　IEEE.

Keyword：

FinFET Hot carriers Integrated circuit manufacture Integrated circuits Nanotechnology Testing

Community：

[ 1 ] [Sun, Zixuan]College of Physics and Information Engineering, Fuzhou University, Fujian; 350002, China
[ 2 ] [Yu, Zhuoqing]Institute of Microelectronics, Peking University, Beijing; 100871, China
[ 3 ] [Wang, Runsheng]Institute of Microelectronics, Peking University, Beijing; 100871, China
[ 4 ] [Zhang, Jiayang]Institute of Microelectronics, Peking University, Beijing; 100871, China
[ 5 ] [Zhang, Zhe]Institute of Microelectronics, Peking University, Beijing; 100871, China
[ 6 ] [Lu, Peimin]College of Physics and Information Engineering, Fuzhou University, Fujian; 350002, China
[ 7 ] [Huang, Ru]Institute of Microelectronics, Peking University, Beijing; 100871, China

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Investigation of DIBL Degradation in Nanoscale FinFETs under Various Hot Carrier Stresses
2018，2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

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Year： 2018

Language： English

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SCOPUS Cited Count： 4

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 1

Affiliated Colleges：

物理与信息工程学院、微电子学院本学院/部未明确归属的数据

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