Comprehensive Study on the 'Anomalous' Complex RTN in Advanced Multi-Fin Bulk FinFET Technology - Details

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EI Scopus

Abstract：

In　this　paper,　random　telegraph　noise　(RTN)　in　advanced　multi-Fin　bulk　FinFETs　are　comprehensively　studied　for　the　first　time.　Based　on　the　statistical　experiments,　the　complete　categories　of　simple　and　complex　RTNs　are　identified　and　analyzed　in　details.　Especially,　the　anomalous　＇reversal　RTN＇　induced　by　2　metastable　states　in　single　oxide　trap,　are　found　not　rare,　but　appears　at　a　certain　percentage,　which　provides　a　unique　opportunity　for　statistically　studying　the　metastable　states　directly　from　RTN　measurements.　In　addition,　anomalous　layout　dependence　of　RTN　amplitudes　are　observed,　with　respects　to　Fin　number.　The　results　are　helpful　for　deep　understanding　of　reliability　physics　and　robust　circuit　design　against　RTN.　©　2018　IEEE.

Keyword：

FinFET Fins (heat exchange)

Community：

[ 1 ] [Zhang, Jiayang]Institute of Microelectronics, Peking University, Beijing; 100871, China
[ 2 ] [Zhang, Zhe]Institute of Microelectronics, Peking University, Beijing; 100871, China
[ 3 ] [Wang, Rusheng]Institute of Microelectronics, Peking University, Beijing; 100871, China
[ 4 ] [Sun, Zixuan]College of Physics and Information Engineering, Fuzhou University, Fujian; 350002, China
[ 5 ] [Zhang, Zuodong]Institute of Microelectronics, Peking University, Beijing; 100871, China
[ 6 ] [Guo, Shaofeng]Institute of Microelectronics, Peking University, Beijing; 100871, China
[ 7 ] [Huang, Ru]Institute of Microelectronics, Peking University, Beijing; 100871, China