Cu-doped　SnS　films　with　a　thickness　of　about　300　nm　have　been　grown　on　glass　substrates　by　thermal　evaporation　technique.　Different　Cu-doped　SnS　films　were　obtained　by　controlling　the　Cu　evaporation　time　to　roughly　alter　Cu-doping　concentration　in　SnS　films　(from　5.7　atom%　to　23　atom%　).　Then　they　were　annealed　at　a　temperature　of　250　°C　and　a　pressure　of　5.0×10　-3　Pa　for　90　min.　The　structural,　optical　and　electrical　properties　of　the　films　were　characterized　with　X-ray　diffraction,　UV/VIS/NIR　Spectrometer　and　Hall　Effect　Measurement　System.　All　the　films　are　polycrystalline　SnS　with　orthorhombic　structure,　and　the　crystallites　in　the　films　are　all　exclusively　oriented　along　the　(111)　direction.　With　the　increase　of　Cu-doping　concentration,　the　evaluated　direct　band　gap　Eg　of　the　SnS:Cu　films　initially　decreases,　reaches　a　minimum　value　of　1.38　eV　with　15　atom%　Cu　and　then　increases　thereafter.　The　carrier　concentration　of　the　films　increases　sharply,　while　the　resistivity　of　the　films　decreases　straightly.　All　the　films　are　of　p-type　conductivity.　Using　the　optimized　conditions　it　is　possible　to　prepare　SnS:Cu　thin　films　suitable　for　absorbers　of　thin　film　solar　cells.　©　2011　IEEE.