Influence of sulfurization temperature on structure and semiconducting properties of SnxSy thin films - Details

author：

Cheng, Shuying (Cheng, Shuying.) ^[1] (Scholars：程树英) | Peng, Shaopeng (Peng, Shaopeng.) ^[2] | Yang, Yongli (Yang, Yongli.) ^[3]

Indexed by：

EI Scopus

Abstract：

SnxSy　thin　films　were　prepared　by　a　two-step　process.　This　process　includes　deposition　of　Sn　films　on　glass　substrates　by　thermal　evaporation　and　sulfurization　of　Sn　thin　films　in　a　vacuum　condition　at　different　temperatures　of　150-300°C　for　45min.　The　microstructures,　composition　and　photoelectrical　properties　of　the　films　were　investigated.　The　results　show　that,　there　are　some　differences　in　structure,　phase　and　morphology　for　the　films　synthesized　at　different　sulfurization　temperatures.　All　the　films　are　of　p-type　conduction.　With　the　increase　of　the　sulfurization　temperature,　Hall　mobility　and　carrier　concentration　of　the　films　are　increased,　whereas　the　resistivity　is　reduced.　The　films　sulfurized　at　240°C　are　the　best,　and　they　are　polycrystalline　SnS　films　with　orthorhombic　structure.　The　SnS　films　have　a　strong　{111}　preferred　orientation　and　good　adhesion　to　the　substrates.　They　are　uniform　with　grain　size　of　about　200-800　nm.　The　resistivity　of　the　SnS　film　is　25.54Ω·cm.　©The　Electrochemical　Society.

Keyword：

Carrier concentration Deposition Hall mobility IV-VI semiconductors Layered semiconductors Morphology Semiconducting films Semiconducting tin compounds Substrates Thermal evaporation Thin films Tin Tin compounds Vacuum evaporation

Community：

[ 1 ] [Cheng, Shuying]College of Physics and Information Engineering, Fuzhou University, Fujian Fuzhou, 350108, China
[ 2 ] [Peng, Shaopeng]College of Physics and Information Engineering, Fuzhou University, Fujian Fuzhou, 350108, China
[ 3 ] [Yang, Yongli]Key Laboratory of Analysis and Detection Technology for Food Safety, Department of Chemistry, Fuzhou University, Fuzhou, Fujian ,350108, China