Silver-doping　in　SnS　films　can　improve　the　semiconducting　properties　of　SnS　films.　Based　on　our　previous　research,　SnS:Ag　thin　films　were　deposited　on　ITO　coated　glass　by　pulse　electro-deposition　in　order　to　study　their　structural,　optical　and　electrical　properties.　SnS:Ag　thin　films　were　characterized　with　X-ray　diffraction　(XRD),　Scanning　Electron　Microscope　(SEM)　and　some　other　methods.　The　primary　composition　of　the　films　is　SnS,　but　maybe　there　is　a　little　quantity　of　SnS2,　Ag8SnS6　and　other　compounds.　The　doped　films　exhibit　good　crystallization　with　big　grain　size.　They　have　an　optical　gap　of　1.66∼1.89eV　and　a　high　absorption　coefficient　(α＞　5×104cm01).　Hall　measurement　has　shown　that　all　the　samples　are　of　p-type　conduction　with　low　resistivity　of　the　order　of　10-3Ω·cm,　and　the　carrier　concentration　increases　to　1019cm-3　after　Ag-doping.　In　conclusion,　the　semiconducting　properties　of　the　SnS　films　have　been　improved　by　silver-doping.　Thus,　SnS:Ag　thin　films　can　be　used　as　solar　cells　absorbers.　©　2009　Trans　Tech　Publications,　Switzerland.