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Abstract：
A New method for analyzing the isothermal capacitance transience is suggested, which is referred to as the isothermal capacitance transience - time spectroscopy ( ICTTS) -. The method can be used to observe highly deep levels in semiconductors with wide band gaps near the room temperature. The deep levels of solid C-70/p-GaAs heterojunctions are investigated by this method. It is found that there are two hole traps, H-1 and H-2 with level of E-v + 0.856 eV and E-v + 1.037 eV in solid C-70, respectively.
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ACTA PHYSICA SINICA
ISSN： 1000-3290
CN： 11-1958/O4
Year： 2004
Issue： 10
Volume： 53
Page： 3498-3503
1 . 2 5
JCR@2004
0 . 8 0 0
JCR@2023
ESI Discipline： PHYSICS;
JCR Journal Grade：2
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ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 0
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