Highly deep levels in solid C70/p-GaAs structures - Details

author：

Ran, G.-Z. (Ran, G.-Z..) ^[1] | Chen, Y. (Chen, Y..) ^[2] | Chen, K.-M. (Chen, K.-M..) ^[3] | Zhang, X.-L. (Zhang, X.-L..) ^[4] | Liu, H.-F. (Liu, H.-F..) ^[5]

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Scopus PKU CSCD

Abstract：

A　method　for　analyzing　the　isothermal　capacitance　transience　is　suggested,　which　is　referred　to　as　the　isothermal　capacitance　transience-time　spectroscopy　(ICTTS).　The　method　can　be　used　to　observe　highly　deep　levels　in　semiconductors　with　wide　band　gaps　near　the　room　temperature.　The　deep　levels　of　solid　C70/p-GaAs　heterojunctions　are　investigated　by　this　method.　It　is　found　that　there　are　two　hole　traps,　H1　and　H2　with　level　of　EV+0.856　eV　and　EN+1.037　eV　in　solid　C70,　respectively.

Keyword：

C70; Deep levels; Isothermal capacitance transience

Community：

[ 1 ] [Ran, G.-Z.]Coll. of Physics, Peking Univ., Beijing 100871, China
[ 2 ] [Chen, Y.]Coll. of Physics, Peking Univ., Beijing 100871, China
[ 3 ] [Chen, K.-M.]Coll. of Physics, Peking Univ., Beijing 100871, China
[ 4 ] [Zhang, X.-L.]Dept. of Electron Sci., Fuzhou Univ., Fuzhou 350002, China
[ 5 ] [Liu, H.-F.]Res. Inst. of Nonferrous Metals, Beijing 100088, China

Reprint 's Address：

[Ran, G.-Z.]Coll. of Physics, Peking Univ., Beijing 100871, China

Email：

rangz@mail.phy.pku.edu.cn

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Source ：

Acta Physica Sinica

ISSN： 1000-3290

Year： 2004

Issue： 10

Volume： 53

Page： 3498-3503

1 . 2 5

JCR@2004

0 . 8 0 0

JCR@2023

JCR Journal Grade：2

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 2

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