Highly　deep　levels　were　probed　in　solid　C70　with　isothermal　capacitance　transience-time　spectroscopy　(ICTTS).　It　was　found　that　the　negligible　hole　concentration　of　C70,　in　the　top　of　the　valence　band　and　near　the　interface　at　the　bias　of　0　V,　strongly　depends　on　temperature.　The　sample　used　in　the　study　had　a　Ti/C7-/p-GaAs　structure,　and　characterization　of　two　defects,　H1　and　H2　were　focused.　The　results　show　that　two　discrete　hole　traps　were　found　to　exist　in　the　solid　C70　layer　at　the　positions　of　Ev+0.856　eV　and　E　v+1.037　eV.