A　method　for　analyzing　the　isothermal　capacitance　transience　is　suggested,　which　is　referred　to　as　the　isothermal　capacitance　transience-time　spectroscopy　(ICTTS).　The　method　can　be　used　to　observe　highly　deep　levels　in　semiconductors　with　wide　band　gaps　near　the　room　temperature.　The　deep　levels　of　solid　C70/p-GaAs　heterojunctions　are　investigated　by　this　method.　It　is　found　that　there　are　two　hole　traps,　H1　and　H2　with　level　of　EV+0.856　eV　and　EN+1.037　eV　in　solid　C70,　respectively.